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K25A10K3-VB Product details
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K25A10K3-VB MOSFET Product Introduction
K25A10K3-VB is a **single N-channel** MOSFET in a **TO220F** package, designed for high-efficiency, high-power applications. The device has a high **drain-source voltage (VDS)** of 100V, suitable for circuit applications that need to handle medium voltages. Its **gate-source voltage (VGS)** is ±20V, providing flexible drive options for compatibility with a variety of control circuits. The **threshold voltage (Vth)** of K25A10K3-VB is 1.8V, allowing it to be turned on smoothly at a lower gate drive voltage, thereby effectively reducing power consumption. In addition, the device's **on-resistance (RDS(ON))** is 34mΩ @ VGS=10V, providing extremely low energy loss, thereby excelling in high-current applications.
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K25A10K3-VB is a **single N-channel** MOSFET in a **TO220F** package, designed for high-efficiency, high-power applications. The device has a high **drain-source voltage (VDS)** of 100V, suitable for circuit applications that need to handle medium voltages. Its **gate-source voltage (VGS)** is ±20V, providing flexible drive options for compatibility with a variety of control circuits. The **threshold voltage (Vth)** of K25A10K3-VB is 1.8V, allowing it to be turned on smoothly at a lower gate drive voltage, thereby effectively reducing power consumption. In addition, the device's **on-resistance (RDS(ON))** is 34mΩ @ VGS=10V, providing extremely low energy loss, thereby excelling in high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K25A10K3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 34mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology to ensure low conduction loss and high efficiency
- **Operating temperature range**: Suitable for stable operation in various industrial environments
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- **Model**: K25A10K3-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 34mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology to ensure low conduction loss and high efficiency
- **Operating temperature range**: Suitable for stable operation in various industrial environments
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Domain and module applications：
Application fields and module examples
K25A10K3-VB MOSFET is suitable for multiple fields and modules due to its excellent characteristics, as shown below:
1. **Power management and conversion**: K25A10K3-VB is very suitable for power management devices such as DC-DC converters and AC-DC power adapters, providing efficient power conversion and regulation to ensure stable operation of the equipment under different load conditions.
2. **Electric vehicles and charging systems**: In chargers and battery management systems for electric vehicles, K25A10K3-VB can be used for high power control and current management to help achieve efficient charging and energy storage.
3. **Industrial automation**: This MOSFET is used in industrial control systems for applications such as motor drives and servo controls to ensure stable current transmission under high load conditions.
4. **Audio and video equipment**: In high-power audio amplifiers, the K25A10K3-VB can effectively drive speakers and other loads, providing excellent sound quality and stability.
5. **LED drive circuit**: The K25A10K3-VB is suitable for high-power LED drive modules, providing reliable current control to ensure stable operation of LEDs at high efficiency, and is widely used in indoor and outdoor lighting.
The K25A10K3-VB is an efficient, high-power handling MOSFET suitable for playing an important role in a variety of high-performance applications.
K25A10K3-VB MOSFET is suitable for multiple fields and modules due to its excellent characteristics, as shown below:
1. **Power management and conversion**: K25A10K3-VB is very suitable for power management devices such as DC-DC converters and AC-DC power adapters, providing efficient power conversion and regulation to ensure stable operation of the equipment under different load conditions.
2. **Electric vehicles and charging systems**: In chargers and battery management systems for electric vehicles, K25A10K3-VB can be used for high power control and current management to help achieve efficient charging and energy storage.
3. **Industrial automation**: This MOSFET is used in industrial control systems for applications such as motor drives and servo controls to ensure stable current transmission under high load conditions.
4. **Audio and video equipment**: In high-power audio amplifiers, the K25A10K3-VB can effectively drive speakers and other loads, providing excellent sound quality and stability.
5. **LED drive circuit**: The K25A10K3-VB is suitable for high-power LED drive modules, providing reliable current control to ensure stable operation of LEDs at high efficiency, and is widely used in indoor and outdoor lighting.
The K25A10K3-VB is an efficient, high-power handling MOSFET suitable for playing an important role in a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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