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K2586-VB Product details
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K2586-VB MOSFET Product Introduction
K2586-VB is a high-performance **single N-channel MOSFET**, using **TO3P package**, designed for high current applications. Its **drain to source voltage (VDS)** can reach **60V**, suitable for power management and switching applications. The on-resistance (RDS(ON)) of this MOSFET is **3.6mΩ** at VGS=4.5V, and is lower to **3mΩ** at VGS=10V, ensuring excellent efficiency under high current conditions. The **threshold voltage (Vth)** of K2586-VB is **3V**, and its **maximum drain current (ID)** reaches **210A**, which can meet applications with high power requirements. Manufactured using **Trench technology**, it has superior switching speed and low power consumption characteristics, and is particularly suitable for working in harsh power environments.
K2586-VB is a high-performance **single N-channel MOSFET**, using **TO3P package**, designed for high current applications. Its **drain to source voltage (VDS)** can reach **60V**, suitable for power management and switching applications. The on-resistance (RDS(ON)) of this MOSFET is **3.6mΩ** at VGS=4.5V, and is lower to **3mΩ** at VGS=10V, ensuring excellent efficiency under high current conditions. The **threshold voltage (Vth)** of K2586-VB is **3V**, and its **maximum drain current (ID)** reaches **210A**, which can meet applications with high power requirements. Manufactured using **Trench technology**, it has superior switching speed and low power consumption characteristics, and is particularly suitable for working in harsh power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
1. **Package**: TO3P
TO3P package has good heat dissipation performance and high current resistance, suitable for high power density application environment.
2. **Configuration**: Single N-channel
Single N-channel configuration ensures stable performance of the device in high-efficiency switching and amplification applications.
3. **VDS (Drain to Source Voltage)**: 60V
Suitable for medium voltage range, can meet the needs of a variety of power and switching applications.
4. **VGS (Gate to Source Voltage)**: ±20V
Provides a flexible gate drive voltage range, making design more convenient.
5. **Vth (Threshold Voltage)**: 3V
The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, ensuring a fast switching response.
6. **RDS(ON)**:
- **3.6mΩ @ VGS=4.5V**
- **3mΩ @ VGS=10V**
Low on-resistance improves energy efficiency and reduces power consumption, suitable for high-efficiency power conversion applications.
7. **ID(Drain Current)**: 210A
The drain current capability of up to 210A ensures stability in high current environments, suitable for high-power loads.
8. **Technology**: Trench
The use of Trench technology enables MOSFET to have excellent switching performance and low power consumption characteristics, suitable for high-efficiency applications.
1. **Package**: TO3P
TO3P package has good heat dissipation performance and high current resistance, suitable for high power density application environment.
2. **Configuration**: Single N-channel
Single N-channel configuration ensures stable performance of the device in high-efficiency switching and amplification applications.
3. **VDS (Drain to Source Voltage)**: 60V
Suitable for medium voltage range, can meet the needs of a variety of power and switching applications.
4. **VGS (Gate to Source Voltage)**: ±20V
Provides a flexible gate drive voltage range, making design more convenient.
5. **Vth (Threshold Voltage)**: 3V
The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, ensuring a fast switching response.
6. **RDS(ON)**:
- **3.6mΩ @ VGS=4.5V**
- **3mΩ @ VGS=10V**
Low on-resistance improves energy efficiency and reduces power consumption, suitable for high-efficiency power conversion applications.
7. **ID(Drain Current)**: 210A
The drain current capability of up to 210A ensures stability in high current environments, suitable for high-power loads.
8. **Technology**: Trench
The use of Trench technology enables MOSFET to have excellent switching performance and low power consumption characteristics, suitable for high-efficiency applications.
Domain and module applications：
Applications and module examples
1. **Power converter**
K2586-VB is very suitable for use in **DC-DC converter**, which can effectively manage power conversion and is widely used in communication equipment, computer power supplies and industrial power modules to provide efficient power conversion and management.
2. **Battery Management System (BMS)**
In the **Battery Management System**, this MOSFET can efficiently control the charging and discharging of the battery, which is particularly suitable for electric vehicles and energy storage systems to ensure the safety and efficiency of the battery.
3. **Motor control**
K2586-VB can be widely used in **Motor control** fields due to its high current capability, including fan drive, power tools and electric vehicle motor control, and can provide stable power management as an efficient drive element.
4. **High power load switch**
This MOSFET is suitable for a variety of **high power load switch** applications, which can achieve fast switching control and low loss, and is suitable for industrial automation, smart home and other occasions requiring high current switching.
5. **Intelligent Power Management**
In the **Intelligent Power Management Module**, K2586-VB can achieve efficient power distribution and management, improve the energy efficiency of the overall system, and is suitable for various consumer electronics and industrial equipment.
In general, K2586-VB, with its excellent current carrying capacity, low on-resistance and high-speed switching performance, has shown wide application potential in power management, power tools and industrial control, providing reliable support for various efficient power solutions.
1. **Power converter**
K2586-VB is very suitable for use in **DC-DC converter**, which can effectively manage power conversion and is widely used in communication equipment, computer power supplies and industrial power modules to provide efficient power conversion and management.
2. **Battery Management System (BMS)**
In the **Battery Management System**, this MOSFET can efficiently control the charging and discharging of the battery, which is particularly suitable for electric vehicles and energy storage systems to ensure the safety and efficiency of the battery.
3. **Motor control**
K2586-VB can be widely used in **Motor control** fields due to its high current capability, including fan drive, power tools and electric vehicle motor control, and can provide stable power management as an efficient drive element.
4. **High power load switch**
This MOSFET is suitable for a variety of **high power load switch** applications, which can achieve fast switching control and low loss, and is suitable for industrial automation, smart home and other occasions requiring high current switching.
5. **Intelligent Power Management**
In the **Intelligent Power Management Module**, K2586-VB can achieve efficient power distribution and management, improve the energy efficiency of the overall system, and is suitable for various consumer electronics and industrial equipment.
In general, K2586-VB, with its excellent current carrying capacity, low on-resistance and high-speed switching performance, has shown wide application potential in power management, power tools and industrial control, providing reliable support for various efficient power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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