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K2553-VB Product details
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K2553-VB MOSFET Product Introduction
K2553-VB is a high-performance **single N-channel MOSFET** in a **TO252 package**, designed for high current and low on-resistance applications. The device has a **60V drain-to-source voltage (VDS)** and is suitable for medium and low voltage power supplies and switching applications. Its on-resistance (RDS(ON)) is **12mΩ** at VGS=4.5V and is as low as **4.5mΩ** at VGS=10V, ensuring high efficiency and low power consumption under high current operating conditions. The **threshold voltage (Vth)** of K2553-VB is **3V**, and the maximum **drain current (ID)** can reach **97A**, which enables stable operation in high power scenarios. It is manufactured based on **Trench technology** and has good switching speed and conduction performance, making it very suitable for power conversion and load switching applications.
K2553-VB is a high-performance **single N-channel MOSFET** in a **TO252 package**, designed for high current and low on-resistance applications. The device has a **60V drain-to-source voltage (VDS)** and is suitable for medium and low voltage power supplies and switching applications. Its on-resistance (RDS(ON)) is **12mΩ** at VGS=4.5V and is as low as **4.5mΩ** at VGS=10V, ensuring high efficiency and low power consumption under high current operating conditions. The **threshold voltage (Vth)** of K2553-VB is **3V**, and the maximum **drain current (ID)** can reach **97A**, which enables stable operation in high power scenarios. It is manufactured based on **Trench technology** and has good switching speed and conduction performance, making it very suitable for power conversion and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
This miniaturized package provides excellent thermal management and compact PCB design for high power density applications.
2. **Configuration**: Single N-channel
This configuration provides superior performance in high-efficiency switching and power amplification applications.
3. **VDS (Drain to Source Voltage)**: 60V
Able to withstand medium voltage, suitable for use in medium and low voltage applications such as automotive electronics and power management.
4. **VGS (Gate to Source Voltage)**: ±20V
Provides a wide gate drive voltage range, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3V
The lower threshold voltage means that the MOSFET can be started at a lower gate voltage, ensuring a fast switching response.
6. **RDS(ON)（On-resistance）**:
- **12mΩ @ VGS=4.5V**
- **4.5mΩ @ VGS=10V**
Low on-resistance makes it suitable for high-efficiency conversion, reducing power loss and improving system efficiency.
7. **ID（Drain Current）**: 97A
High drain current capability is very suitable for high current load drive and power conversion applications.
8. **Technology**: Trench
This technology improves the switching speed and conduction efficiency of MOSFET, suitable for high-efficiency and high-speed switching applications.
1. **Package**: TO252
This miniaturized package provides excellent thermal management and compact PCB design for high power density applications.
2. **Configuration**: Single N-channel
This configuration provides superior performance in high-efficiency switching and power amplification applications.
3. **VDS (Drain to Source Voltage)**: 60V
Able to withstand medium voltage, suitable for use in medium and low voltage applications such as automotive electronics and power management.
4. **VGS (Gate to Source Voltage)**: ±20V
Provides a wide gate drive voltage range, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3V
The lower threshold voltage means that the MOSFET can be started at a lower gate voltage, ensuring a fast switching response.
6. **RDS(ON)（On-resistance）**:
- **12mΩ @ VGS=4.5V**
- **4.5mΩ @ VGS=10V**
Low on-resistance makes it suitable for high-efficiency conversion, reducing power loss and improving system efficiency.
7. **ID（Drain Current）**: 97A
High drain current capability is very suitable for high current load drive and power conversion applications.
8. **Technology**: Trench
This technology improves the switching speed and conduction efficiency of MOSFET, suitable for high-efficiency and high-speed switching applications.
Domain and module applications：
Applications and module examples
1. **Automotive electronics**
K2553-VB is suitable for use in **power seats, power windows and lighting systems** in the automotive electronics field, providing reliable power switching and efficient current control.
2. **DC-DC converter**
In **DC-DC converter**, this MOSFET can efficiently manage power conversion, especially suitable for medium and low voltage power modules, which are widely used in communication equipment, consumer electronics and industrial control systems.
3. **Battery management system (BMS)**
K2553-VB performs well in **battery management systems**, especially in electric vehicles and energy storage systems, providing efficient current control and low power consumption characteristics to ensure safe and efficient battery charging and discharging.
4. **Motor control**
Its high current carrying capacity enables it to be used as an efficient driver element in **motor control** applications such as fans, power tools and electric pumps, providing stable power management and load control.
5. **Power switch and load switch**
K2553-VB can achieve low conduction loss in **load switch** and **power switch** modules, ensuring stable operation under different power supply environments, and is suitable for industrial automation equipment and smart home power management systems.
In summary, K2553-VB has broad application prospects in **power management, automotive electronics, industrial control** and other fields with its excellent high current capability, low on-resistance and high-speed switching characteristics, and can provide reliable solutions for efficient power conversion and load management.
1. **Automotive electronics**
K2553-VB is suitable for use in **power seats, power windows and lighting systems** in the automotive electronics field, providing reliable power switching and efficient current control.
2. **DC-DC converter**
In **DC-DC converter**, this MOSFET can efficiently manage power conversion, especially suitable for medium and low voltage power modules, which are widely used in communication equipment, consumer electronics and industrial control systems.
3. **Battery management system (BMS)**
K2553-VB performs well in **battery management systems**, especially in electric vehicles and energy storage systems, providing efficient current control and low power consumption characteristics to ensure safe and efficient battery charging and discharging.
4. **Motor control**
Its high current carrying capacity enables it to be used as an efficient driver element in **motor control** applications such as fans, power tools and electric pumps, providing stable power management and load control.
5. **Power switch and load switch**
K2553-VB can achieve low conduction loss in **load switch** and **power switch** modules, ensuring stable operation under different power supply environments, and is suitable for industrial automation equipment and smart home power management systems.
In summary, K2553-VB has broad application prospects in **power management, automotive electronics, industrial control** and other fields with its excellent high current capability, low on-resistance and high-speed switching characteristics, and can provide reliable solutions for efficient power conversion and load management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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