K2518-01MR-VB Product details
Product introduction:
K2518-01MR-VB is a high-performance single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 200V, which is suitable for power conversion and drive circuits that require higher voltages. The gate-source voltage (VGS) of this MOSFET can reach ±20V, ensuring reliability under a variety of operating conditions. The threshold voltage (Vth) of K2518-01MR-VB is 3V, and it can be turned on quickly under a reasonable control voltage. Its on-resistance (RDS(ON)) is 58mΩ at VGS=10V, providing extremely low power loss, suitable for circuits that require high efficiency and low heat generation. K2518-01MR-VB uses Trench technology to ensure its stability under high frequency and high temperature conditions, and is widely used in power management, industrial control, automotive electronics and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Trench
- **Maximum power dissipation**: 50W (typical)
- **Operating temperature range**: -55°C ~ 150°C
- **Input capacitance (Ciss)**: 1,500pF (typical)
- **Output capacitance (Coss)**: 150pF (typical)
- **Reverse recovery time (trr)**: 75ns (typical)
Domain and module applications:
1. **Power Converter**
K2518-01MR-VB is widely used in switching power supplies and DC-DC converters. Its high voltage and low on-resistance characteristics enable it to reduce energy consumption and improve system efficiency during power conversion. It is suitable for power management of computer power supplies, adapters and other electronic devices.
2. **Industrial Automation**
This MOSFET performs well in the field of industrial automation and can be used for applications such as driving motors and controlling current. Its ability to handle higher voltages and currents makes it an ideal choice for motor control and relay drive circuits in automation equipment.
3. **Automotive Electronics**
K2518-01MR-VB can be applied to automotive electronic devices such as power windows, seat adjustments and lighting controls. Its high voltage resistance and high current handling capabilities ensure reliability in the automotive environment and improve the overall performance of the system.
4. **LED drive circuit**
In LED lighting systems, K2518-01MR-VB can be used as a driving power switch to provide stable current and effective energy conversion, ensuring the brightness uniformity and high energy efficiency of LED lamps, and is suitable for home lighting and commercial lighting.
In summary, K2518-01MR-VB is a single N-channel MOSFET with excellent performance. Its excellent electrical characteristics and wide range of application scenarios provide strong support for various power management and control circuits, and promote high efficiency and low power consumption operation of electronic equipment.
Technical support:
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