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K2516-01L,S-VB Product details
Back to previous pageProduct introduction：
：**
K2516-01L, S-VB is a high-performance N-channel power MOSFET in a compact TO263 package, designed for low-voltage and high-current applications. With a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, the device is suitable for the requirements of various modern electronic products. Its turn-on voltage (Vth) is 1.7V, allowing the device to be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 12mΩ at VGS=10V, ensuring low conduction losses and allowing a maximum drain current (ID) of 50A. K2516-01L, S-VB uses advanced Trench technology with excellent thermal performance and energy efficiency, making it suitable for a variety of high-efficiency switching and amplification applications.
**Two,
K2516-01L, S-VB is a high-performance N-channel power MOSFET in a compact TO263 package, designed for low-voltage and high-current applications. With a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, the device is suitable for the requirements of various modern electronic products. Its turn-on voltage (Vth) is 1.7V, allowing the device to be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 12mΩ at VGS=10V, ensuring low conduction losses and allowing a maximum drain current (ID) of 50A. K2516-01L, S-VB uses advanced Trench technology with excellent thermal performance and energy efficiency, making it suitable for a variety of high-efficiency switching and amplification applications.
**Two,
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
：**
- **Package Type**: TO263
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Throw-Through Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 12mΩ @ VGS=10V
- 18mΩ @ VGS=4.5V
- **Drain Current(ID)**: 50A
- **Technology Type**: Trench
- **Operating Temperature Range**: -55°C ~ 150°C
- **Maximum Power Dissipation**: 45W (under proper heat dissipation conditions)
**
- **Package Type**: TO263
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Throw-Through Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 12mΩ @ VGS=10V
- 18mΩ @ VGS=4.5V
- **Drain Current(ID)**: 50A
- **Technology Type**: Trench
- **Operating Temperature Range**: -55°C ~ 150°C
- **Maximum Power Dissipation**: 45W (under proper heat dissipation conditions)
**
Domain and module applications：
：**
1. **Power Management System**: K2516-01L, S-VB can be used for efficient DC-DC converters, which can achieve high conversion efficiency and is suitable for power modules of portable devices such as smartphones and tablets.
2. **Motor Control**: This MOSFET is very suitable for motor drive circuits. It can withstand high currents and switch quickly, and is suitable for motor control in electric vehicles and automation equipment.
3. **LED Drive**: K2516-01L, S-VB performs well in LED lighting applications. Its low on-resistance ensures efficient power transmission and is suitable for commercial lighting and home lighting systems.
4. **Battery Management System**: In the charge and discharge management of lithium batteries, this device can efficiently control the current, prevent overcharge and overdischarge, and ensure the safety and life of the battery.
5. **Consumer Electronics**: K2516-01L, S-VB can be widely used in switching power supplies and signal amplifiers of various consumer electronic products, meeting the requirements of modern electronic devices for miniaturization and high efficiency.
With its excellent electrical performance and diverse application potential, K2516-01L, S-VB is an ideal choice for realizing high-efficiency switching and amplification circuits, which can meet the needs of many fields.
1. **Power Management System**: K2516-01L, S-VB can be used for efficient DC-DC converters, which can achieve high conversion efficiency and is suitable for power modules of portable devices such as smartphones and tablets.
2. **Motor Control**: This MOSFET is very suitable for motor drive circuits. It can withstand high currents and switch quickly, and is suitable for motor control in electric vehicles and automation equipment.
3. **LED Drive**: K2516-01L, S-VB performs well in LED lighting applications. Its low on-resistance ensures efficient power transmission and is suitable for commercial lighting and home lighting systems.
4. **Battery Management System**: In the charge and discharge management of lithium batteries, this device can efficiently control the current, prevent overcharge and overdischarge, and ensure the safety and life of the battery.
5. **Consumer Electronics**: K2516-01L, S-VB can be widely used in switching power supplies and signal amplifiers of various consumer electronic products, meeting the requirements of modern electronic devices for miniaturization and high efficiency.
With its excellent electrical performance and diverse application potential, K2516-01L, S-VB is an ideal choice for realizing high-efficiency switching and amplification circuits, which can meet the needs of many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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