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K2499-Z-VB Product details
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K2499-Z-VB MOSFET Product Introduction
K2499-Z-VB is a high-efficiency **single N-channel** MOSFET in **TO263** package, designed for high current applications. The device has a **maximum drain-source voltage (VDS)** of 60V, capable of handling higher voltages and currents, and is suitable for a variety of high-performance power and motor control applications. Its **gate-source voltage (VGS)** is rated at ±20V, ensuring stability under different operating conditions. The threshold voltage (Vth) is 3V, allowing it to work normally at a lower drive voltage. The **on-resistance (RDS(ON))** of K2499-Z-VB is only 4mΩ at VGS=10V, supporting up to **drain current (ID)** 150A, showing its excellent conductive performance and thermal management capabilities. Using **Trench** technology, K2499-Z-VB provides better efficiency and thermal stability, suitable for high power density applications.
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K2499-Z-VB is a high-efficiency **single N-channel** MOSFET in **TO263** package, designed for high current applications. The device has a **maximum drain-source voltage (VDS)** of 60V, capable of handling higher voltages and currents, and is suitable for a variety of high-performance power and motor control applications. Its **gate-source voltage (VGS)** is rated at ±20V, ensuring stability under different operating conditions. The threshold voltage (Vth) is 3V, allowing it to work normally at a lower drive voltage. The **on-resistance (RDS(ON))** of K2499-Z-VB is only 4mΩ at VGS=10V, supporting up to **drain current (ID)** 150A, showing its excellent conductive performance and thermal management capabilities. Using **Trench** technology, K2499-Z-VB provides better efficiency and thermal stability, suitable for high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: K2499-Z-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature**: Suitable for a variety of environmental conditions to ensure stability and reliability in high current environments.
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- **Model**: K2499-Z-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature**: Suitable for a variety of environmental conditions to ensure stability and reliability in high current environments.
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Domain and module applications：
Applications and module examples
K2499-Z-VB performs well in multiple high-current and high-efficiency applications. Here are some specific application examples:
1. **Power management**: In high-efficiency power supplies, K2499-Z-VB can be used as the main switching element, providing extremely low on-resistance and significantly improving conversion efficiency. It is suitable for server and high-performance computer power supplies.
2. **Motor drive**: This MOSFET can be used as an efficient switching element in motor control systems, especially in electric vehicles and industrial motor drives, to support high current starting and operation.
3. **Inverter**: K2499-Z-VB can be used in solar inverters and other high-power inverter applications to provide efficient energy conversion and improve the overall performance and reliability of the system.
4. **Fast switching applications**: In high-frequency applications such as DC-DC converters and synchronous rectifiers, K2499-Z-VB can achieve fast switching and reduce energy loss, making it suitable for a variety of mobile devices and battery-powered systems.
K2499-Z-VB is a MOSFET suitable for high current and high efficiency applications. With its superior performance, it can meet the needs of modern electronic devices for high power density and thermal management.
K2499-Z-VB performs well in multiple high-current and high-efficiency applications. Here are some specific application examples:
1. **Power management**: In high-efficiency power supplies, K2499-Z-VB can be used as the main switching element, providing extremely low on-resistance and significantly improving conversion efficiency. It is suitable for server and high-performance computer power supplies.
2. **Motor drive**: This MOSFET can be used as an efficient switching element in motor control systems, especially in electric vehicles and industrial motor drives, to support high current starting and operation.
3. **Inverter**: K2499-Z-VB can be used in solar inverters and other high-power inverter applications to provide efficient energy conversion and improve the overall performance and reliability of the system.
4. **Fast switching applications**: In high-frequency applications such as DC-DC converters and synchronous rectifiers, K2499-Z-VB can achieve fast switching and reduce energy loss, making it suitable for a variety of mobile devices and battery-powered systems.
K2499-Z-VB is a MOSFET suitable for high current and high efficiency applications. With its superior performance, it can meet the needs of modern electronic devices for high power density and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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