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K2493-VB Product details
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K2493-VB MOSFET Product Introduction
K2493-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. The device has an extremely low on-resistance (RDS(ON)) of only 4.5mΩ at VGS=4.5V, making it very efficient under high current conditions. The drain-to-source voltage (VDS) of K2493-VB is 20V, making it suitable for use in medium voltage power supply applications. The gate-to-source voltage (VGS) has a tolerance range of ±20V, ensuring adaptability to various control signals. Its threshold voltage (Vth) range is 0.5~1.5V, allowing the MOSFET to be turned on at a lower gate voltage. Its maximum drain current (ID) can reach 100A, making it suitable for applications that require high current handling. K2493-VB adopts **Trench technology**, which performs well in high-frequency applications and is widely used in power management, motor drive and other electronic devices.
K2493-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. The device has an extremely low on-resistance (RDS(ON)) of only 4.5mΩ at VGS=4.5V, making it very efficient under high current conditions. The drain-to-source voltage (VDS) of K2493-VB is 20V, making it suitable for use in medium voltage power supply applications. The gate-to-source voltage (VGS) has a tolerance range of ±20V, ensuring adaptability to various control signals. Its threshold voltage (Vth) range is 0.5~1.5V, allowing the MOSFET to be turned on at a lower gate voltage. Its maximum drain current (ID) can reach 100A, making it suitable for applications that require high current handling. K2493-VB adopts **Trench technology**, which performs well in high-frequency applications and is widely used in power management, motor drive and other electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
This package provides good heat dissipation and size adaptability, making it easy to use in compact circuit boards.
2. **Configuration**: Single N-channel
The single N-channel structure design is suitable for efficient switching and amplification functions, suitable for a variety of circuit designs.
3. **VDS (Drain to Source Voltage)**: 20V
Suitable for low to medium voltage applications, able to work stably under a variety of power supply conditions.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide range of gate voltage tolerance improves design flexibility and is suitable for a variety of control circuits.
5. **Vth (Threshold Voltage)**: 0.5~1.5V
The low threshold voltage allows it to turn on quickly at low gate voltage, suitable for low power circuits.
6. **RDS(ON)**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
Extremely low on-resistance ensures minimal loss in the on state, improving system efficiency.
7. **ID(leakage current)**: 100A
High leakage current capability is suitable for applications requiring high current output.
8. **Technology**: Trench
Trench technology can provide better switching characteristics and lower conduction losses, suitable for high frequency operation.
1. **Package**: TO252
This package provides good heat dissipation and size adaptability, making it easy to use in compact circuit boards.
2. **Configuration**: Single N-channel
The single N-channel structure design is suitable for efficient switching and amplification functions, suitable for a variety of circuit designs.
3. **VDS (Drain to Source Voltage)**: 20V
Suitable for low to medium voltage applications, able to work stably under a variety of power supply conditions.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide range of gate voltage tolerance improves design flexibility and is suitable for a variety of control circuits.
5. **Vth (Threshold Voltage)**: 0.5~1.5V
The low threshold voltage allows it to turn on quickly at low gate voltage, suitable for low power circuits.
6. **RDS(ON)**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
Extremely low on-resistance ensures minimal loss in the on state, improving system efficiency.
7. **ID(leakage current)**: 100A
High leakage current capability is suitable for applications requiring high current output.
8. **Technology**: Trench
Trench technology can provide better switching characteristics and lower conduction losses, suitable for high frequency operation.
Domain and module applications：
Applicable fields and application examples of modules
1. **Power management system**
K2493-VB is very suitable for **power management circuit**, which can achieve efficient current control and voltage regulation to ensure stable operation of the system.
2. **DC-DC converter**
In **DC-DC converter**, this MOSFET can be used as a switching element to convert the power supply voltage in an efficient way to meet the needs of various applications.
3. **Motor control**
K2493-VB can effectively control the start and stop and speed of the motor in the **motor drive circuit**, which is suitable for home appliances, industrial equipment and electric vehicles.
4. **LED drive**
The device can be used for **high-power LED drive** to provide a stable current to ensure high brightness and long life of the LED.
5. **Fast switching circuit**
The fast switching characteristics of K2493-VB make it suitable for **fast switching circuits**, such as switching power supplies and pulse power supply systems, to provide efficient power conversion.
In summary, K2493-VB MOSFET is an ideal choice for power management and control in low voltage and high current environments with its excellent performance and wide applicability.
1. **Power management system**
K2493-VB is very suitable for **power management circuit**, which can achieve efficient current control and voltage regulation to ensure stable operation of the system.
2. **DC-DC converter**
In **DC-DC converter**, this MOSFET can be used as a switching element to convert the power supply voltage in an efficient way to meet the needs of various applications.
3. **Motor control**
K2493-VB can effectively control the start and stop and speed of the motor in the **motor drive circuit**, which is suitable for home appliances, industrial equipment and electric vehicles.
4. **LED drive**
The device can be used for **high-power LED drive** to provide a stable current to ensure high brightness and long life of the LED.
5. **Fast switching circuit**
The fast switching characteristics of K2493-VB make it suitable for **fast switching circuits**, such as switching power supplies and pulse power supply systems, to provide efficient power conversion.
In summary, K2493-VB MOSFET is an ideal choice for power management and control in low voltage and high current environments with its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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