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K2470-01MR-VB Product details
Back to previous pageProduct introduction：
：**
K2470-01MR-VB is a high-performance N-channel power MOSFET in TO3P package, designed for high voltage and high current applications. The device can withstand a drain-source voltage (VDS) of up to 600V, and its gate-source voltage (VGS) can reach ±30V, which is suitable for high-efficiency control in a variety of electrical systems. The turn-on voltage (Vth) is 3.5V, ensuring stable operation under normal driving conditions. The on-resistance (RDS(ON)) is only 60mΩ at VGS=10V, with good conduction performance and low thermal loss, and the maximum drain current (ID) can reach 47A. This MOSFET uses SJ_Multi-EPI technology, providing excellent thermal performance and high efficiency, and is ideal for high-power applications.
**Two,
K2470-01MR-VB is a high-performance N-channel power MOSFET in TO3P package, designed for high voltage and high current applications. The device can withstand a drain-source voltage (VDS) of up to 600V, and its gate-source voltage (VGS) can reach ±30V, which is suitable for high-efficiency control in a variety of electrical systems. The turn-on voltage (Vth) is 3.5V, ensuring stable operation under normal driving conditions. The on-resistance (RDS(ON)) is only 60mΩ at VGS=10V, with good conduction performance and low thermal loss, and the maximum drain current (ID) can reach 47A. This MOSFET uses SJ_Multi-EPI technology, providing excellent thermal performance and high efficiency, and is ideal for high-power applications.
**Two,
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
：**
- **Package Type**: TO3P
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 600V
- **Gate-Source Voltage(VGS)**: ±30V
- **Throw-Through Voltage(Vth)**: 3.5V
- **On-Resistance(RDS(ON))**:
- 60mΩ @ VGS=10V
- **Drain Current(ID)**: 47A
- **Technology Type**: SJ_Multi-EPI
- **Operating Temperature Range**: -55°C ~ 150°C
- **Maximum Power Dissipation**: 60W (under proper heat dissipation conditions)
**
- **Package Type**: TO3P
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 600V
- **Gate-Source Voltage(VGS)**: ±30V
- **Throw-Through Voltage(Vth)**: 3.5V
- **On-Resistance(RDS(ON))**:
- 60mΩ @ VGS=10V
- **Drain Current(ID)**: 47A
- **Technology Type**: SJ_Multi-EPI
- **Operating Temperature Range**: -55°C ~ 150°C
- **Maximum Power Dissipation**: 60W (under proper heat dissipation conditions)
**
Domain and module applications：
：**
1. **Power Converters**: K2470-01MR-VB is suitable for AC-DC and DC-DC converters, which can effectively improve energy conversion efficiency and system reliability.
2. **High Voltage Inverters**: In photovoltaic and wind power generation systems, this MOSFET can be used as a key switching element to ensure safe and stable conversion of electrical energy under high voltage conditions.
3. **Industrial Drive Systems**: K2470-01MR-VB can be used in motor control and drive circuits, especially for starting and speed regulation of high-power motors, and can withstand high currents and high voltages.
4. **Welding Equipment**: In industrial equipment such as induction welding and arc welding, this MOSFET can provide strong switching performance to ensure safe operation under high load conditions.
5. **Electrical protection device**: K2470-01MR-VB can be used in overvoltage and overcurrent protection circuits as a fast switching element to effectively protect downstream circuit components.
With its excellent performance parameters and wide application potential, K2470-01MR-VB is an ideal choice for high voltage and high current applications, and can meet the needs of a variety of electrical equipment.
1. **Power Converters**: K2470-01MR-VB is suitable for AC-DC and DC-DC converters, which can effectively improve energy conversion efficiency and system reliability.
2. **High Voltage Inverters**: In photovoltaic and wind power generation systems, this MOSFET can be used as a key switching element to ensure safe and stable conversion of electrical energy under high voltage conditions.
3. **Industrial Drive Systems**: K2470-01MR-VB can be used in motor control and drive circuits, especially for starting and speed regulation of high-power motors, and can withstand high currents and high voltages.
4. **Welding Equipment**: In industrial equipment such as induction welding and arc welding, this MOSFET can provide strong switching performance to ensure safe operation under high load conditions.
5. **Electrical protection device**: K2470-01MR-VB can be used in overvoltage and overcurrent protection circuits as a fast switching element to effectively protect downstream circuit components.
With its excellent performance parameters and wide application potential, K2470-01MR-VB is an ideal choice for high voltage and high current applications, and can meet the needs of a variety of electrical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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