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K2415-Z-VB Product details
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K2422-VB MOSFET Product Introduction
K2422-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications requiring high voltage and medium current. The device has a drain-to-source voltage (VDS) of 650V, suitable for high-voltage power management and switching circuits. The gate-to-source voltage (VGS) has a tolerance range of ±30V, ensuring stability under a variety of control signal conditions. The threshold voltage (Vth) of K2422-VB is 3.5V, suitable for switching operations at lower gate voltages. The device has an on-resistance (RDS(ON)) of 2560mΩ (at VGS=10V), which can effectively reduce power loss under high current operating conditions, and its maximum leakage current (ID) is 4A. K2422-VB uses Plannar technology, which can maintain high efficiency in high-frequency switching operations, and is suitable for power management, motor drive and other electronic applications.
K2422-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications requiring high voltage and medium current. The device has a drain-to-source voltage (VDS) of 650V, suitable for high-voltage power management and switching circuits. The gate-to-source voltage (VGS) has a tolerance range of ±30V, ensuring stability under a variety of control signal conditions. The threshold voltage (Vth) of K2422-VB is 3.5V, suitable for switching operations at lower gate voltages. The device has an on-resistance (RDS(ON)) of 2560mΩ (at VGS=10V), which can effectively reduce power loss under high current operating conditions, and its maximum leakage current (ID) is 4A. K2422-VB uses Plannar technology, which can maintain high efficiency in high-frequency switching operations, and is suitable for power management, motor drive and other electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO220F
This package provides good heat dissipation performance and is suitable for assembly and use of various electronic products.
2. **Configuration**: Single N-channel
The single N-channel configuration makes it very suitable for various switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 650V
The high voltage level enables the device to operate stably in high-voltage applications and is suitable for high-voltage power supply systems.
4. **VGS (Gate to Source Voltage)**: ±30V
The wide gate voltage range improves design flexibility and can adapt to a variety of different control signals.
5. **Vth (Threshold Voltage)**: 3.5V
The moderate threshold voltage ensures that the MOSFET is turned on at a reasonable gate voltage, improving the startup efficiency of the circuit.
6. **RDS(ON)**:
- 2560mΩ @ VGS=10V
Higher on-resistance will cause certain power loss under high current conditions, so corresponding heat dissipation solutions need to be considered during design.
7. **ID(Drain Current)**: 4A
Maximum drain current is 4A, which is suitable for medium current applications and can ensure reliability under various working conditions.
8. **Technology**: Plannar
Plannar technology is suitable for high voltage applications, providing stable electrical characteristics and good switching performance.
1. **Package**: TO220F
This package provides good heat dissipation performance and is suitable for assembly and use of various electronic products.
2. **Configuration**: Single N-channel
The single N-channel configuration makes it very suitable for various switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 650V
The high voltage level enables the device to operate stably in high-voltage applications and is suitable for high-voltage power supply systems.
4. **VGS (Gate to Source Voltage)**: ±30V
The wide gate voltage range improves design flexibility and can adapt to a variety of different control signals.
5. **Vth (Threshold Voltage)**: 3.5V
The moderate threshold voltage ensures that the MOSFET is turned on at a reasonable gate voltage, improving the startup efficiency of the circuit.
6. **RDS(ON)**:
- 2560mΩ @ VGS=10V
Higher on-resistance will cause certain power loss under high current conditions, so corresponding heat dissipation solutions need to be considered during design.
7. **ID(Drain Current)**: 4A
Maximum drain current is 4A, which is suitable for medium current applications and can ensure reliability under various working conditions.
8. **Technology**: Plannar
Plannar technology is suitable for high voltage applications, providing stable electrical characteristics and good switching performance.
Domain and module applications：
Applicable fields and application examples of modules
1. **Switching mode power supply (SMPS)**
K2422-VB is suitable for **switching mode power supply** to achieve efficient energy management in power conversion, especially in high voltage conversion situations.
2. **High voltage LED drive**
In **high voltage LED drive circuit**, this MOSFET can provide stable current control to ensure consistent and efficient LED brightness.
3. **Motor control**
In **motor drive applications**, this MOSFET can efficiently control the start and stop and speed regulation of the motor to achieve excellent power output.
4. **Power management system**
K2422-VB is suitable for various **power management systems**, providing reliable support in power regulation and control, especially in situations where high voltage needs to be handled.
5. **Inverter**
This device can be used in **inverters** to convert DC power into AC power. It is widely used in solar inverters and other renewable energy systems.
In summary, the K2422-VB MOSFET has become an ideal choice for various high-voltage power management and switching applications due to its excellent electrical characteristics and wide applicability.
1. **Switching mode power supply (SMPS)**
K2422-VB is suitable for **switching mode power supply** to achieve efficient energy management in power conversion, especially in high voltage conversion situations.
2. **High voltage LED drive**
In **high voltage LED drive circuit**, this MOSFET can provide stable current control to ensure consistent and efficient LED brightness.
3. **Motor control**
In **motor drive applications**, this MOSFET can efficiently control the start and stop and speed regulation of the motor to achieve excellent power output.
4. **Power management system**
K2422-VB is suitable for various **power management systems**, providing reliable support in power regulation and control, especially in situations where high voltage needs to be handled.
5. **Inverter**
This device can be used in **inverters** to convert DC power into AC power. It is widely used in solar inverters and other renewable energy systems.
In summary, the K2422-VB MOSFET has become an ideal choice for various high-voltage power management and switching applications due to its excellent electrical characteristics and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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