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K2391-VB Product details
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K2391-VB MOSFET Product Introduction
K2391-VB is a high-performance single N-channel MOSFET in a **TO220F package**, designed for a variety of electronic applications. Its **drain to source voltage (VDS)** is **100V**, suitable for medium and low voltage power management and switching circuits. The **gate to source voltage (VGS)** of the device has a tolerance range of ±20V, which flexibly supports a variety of control signal inputs. The **threshold voltage (Vth)** of K2391-VB is **1.8V**, ensuring stable turn-on at a lower gate voltage. When **VGS=10V**, the **on-resistance (RDS(ON))** of the device is only **86mΩ**, which effectively reduces power loss under high current conditions, and the maximum **drain current (ID)** can reach **18A**. This MOSFET adopts **Trench technology**, performs well in high-frequency switching operations, and is suitable for a variety of power electronics applications such as switching power supplies, motor control and LED driving.
K2391-VB is a high-performance single N-channel MOSFET in a **TO220F package**, designed for a variety of electronic applications. Its **drain to source voltage (VDS)** is **100V**, suitable for medium and low voltage power management and switching circuits. The **gate to source voltage (VGS)** of the device has a tolerance range of ±20V, which flexibly supports a variety of control signal inputs. The **threshold voltage (Vth)** of K2391-VB is **1.8V**, ensuring stable turn-on at a lower gate voltage. When **VGS=10V**, the **on-resistance (RDS(ON))** of the device is only **86mΩ**, which effectively reduces power loss under high current conditions, and the maximum **drain current (ID)** can reach **18A**. This MOSFET adopts **Trench technology**, performs well in high-frequency switching operations, and is suitable for a variety of power electronics applications such as switching power supplies, motor control and LED driving.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
This package provides good heat dissipation performance and is suitable for assembly and use of various electronic products.
2. **Configuration**: Single N-channel
The single N-channel configuration makes it very suitable for various switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 100V
This voltage level is suitable for medium voltage applications and can meet a variety of power electronics design requirements.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range improves design flexibility and can adapt to a variety of different control signals.
5. **Vth (Threshold Voltage)**: 1.8V
The low threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, improving startup efficiency.
6. **RDS(ON)**:
- 86mΩ @ VGS=10V
Lower on-resistance means less power loss in the on state, thus improving overall energy efficiency.
7. **ID(Drain Current)**: 18A
The maximum drain current is 18A, which can meet the requirements of high current applications and ensure reliability under various working conditions.
8. **Technology**: Trench
Trench technology excels in improving efficiency and reducing switching losses, making the K2391-VB perform well in high-frequency applications.
1. **Package**: TO220F
This package provides good heat dissipation performance and is suitable for assembly and use of various electronic products.
2. **Configuration**: Single N-channel
The single N-channel configuration makes it very suitable for various switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 100V
This voltage level is suitable for medium voltage applications and can meet a variety of power electronics design requirements.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range improves design flexibility and can adapt to a variety of different control signals.
5. **Vth (Threshold Voltage)**: 1.8V
The low threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, improving startup efficiency.
6. **RDS(ON)**:
- 86mΩ @ VGS=10V
Lower on-resistance means less power loss in the on state, thus improving overall energy efficiency.
7. **ID(Drain Current)**: 18A
The maximum drain current is 18A, which can meet the requirements of high current applications and ensure reliability under various working conditions.
8. **Technology**: Trench
Trench technology excels in improving efficiency and reducing switching losses, making the K2391-VB perform well in high-frequency applications.
Domain and module applications：
Applicable fields and application examples of modules
1. **Switching mode power supply (SMPS)**
K2391-VB is very suitable for **switching mode power supply**, which can achieve efficient power management in power conversion.
2. **LED drive circuit**
In **LED drive circuit**, this MOSFET can provide stable current control to ensure stable brightness and high efficiency of LED.
3. **Motor control**
In **motor control applications**, this MOSFET can effectively control the start and stop and speed regulation of the motor to achieve efficient power output.
4. **Power management system**
K2391-VB is suitable for various **power management systems**, and can provide reliable support in the regulation and control of power.
5. **Battery management**
This device is widely used in **battery management systems**, which can effectively control the charging and discharging process and improve battery efficiency and safety.
In summary, K2391-VB MOSFET is an ideal choice for various power management and switching applications due to its excellent electrical characteristics and wide application applicability.
1. **Switching mode power supply (SMPS)**
K2391-VB is very suitable for **switching mode power supply**, which can achieve efficient power management in power conversion.
2. **LED drive circuit**
In **LED drive circuit**, this MOSFET can provide stable current control to ensure stable brightness and high efficiency of LED.
3. **Motor control**
In **motor control applications**, this MOSFET can effectively control the start and stop and speed regulation of the motor to achieve efficient power output.
4. **Power management system**
K2391-VB is suitable for various **power management systems**, and can provide reliable support in the regulation and control of power.
5. **Battery management**
This device is widely used in **battery management systems**, which can effectively control the charging and discharging process and improve battery efficiency and safety.
In summary, K2391-VB MOSFET is an ideal choice for various power management and switching applications due to its excellent electrical characteristics and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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