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K2373ZE-TL-E-VB Product details
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Product Introduction:
K2373ZE-TL-E-VB is a high-performance single N-channel MOSFET in a compact SOT23-3 package, specially designed for low-power applications. Its drain-source voltage (VDS) is 60V and can handle a drain current (ID) of up to 0.3A. At a VGS of 10V, its on-resistance (RDS(ON)) is 2800mΩ, ensuring efficient current conduction under various operating conditions. K2373ZE-TL-E-VB uses Trench technology, with excellent switching characteristics and thermal stability, suitable for a wide range of electronic devices and power management solutions.
K2373ZE-TL-E-VB is a high-performance single N-channel MOSFET in a compact SOT23-3 package, specially designed for low-power applications. Its drain-source voltage (VDS) is 60V and can handle a drain current (ID) of up to 0.3A. At a VGS of 10V, its on-resistance (RDS(ON)) is 2800mΩ, ensuring efficient current conduction under various operating conditions. K2373ZE-TL-E-VB uses Trench technology, with excellent switching characteristics and thermal stability, suitable for a wide range of electronic devices and power management solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description:
- **Model**: K2373ZE-TL-E-VB
- **Package type**: SOT23-3
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology type**: Trench
- **Model**: K2373ZE-TL-E-VB
- **Package type**: SOT23-3
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples:
1. **Low-power switching power supply**:
K2373ZE-TL-E-VB is suitable for low-power switching power supply design. Due to its compact package and high efficiency, it can be effectively used in power management circuits for USB power supply and other small electronic devices.
2. **LED driver**:
This MOSFET can play an important role in LED driver circuits, especially in portable lighting devices and decorative lighting. Its low on-resistance and high switching frequency ensure the stability and light efficiency of the LED.
3. **Mobile devices**:
In mobile devices such as smartphones and tablets, K2373ZE-TL-E-VB can be used for power management, charging and other low-power applications to help extend battery life and improve overall performance.
4. **Smart home**:
This device is very suitable for various sensors and controllers in smart home systems, providing efficient power switching and signal transmission to ensure system reliability and response speed.
K2373ZE-TL-E-VB has become a key component in modern low-power electronic devices with its high performance and wide applicability, providing reliable solutions for various applications.
1. **Low-power switching power supply**:
K2373ZE-TL-E-VB is suitable for low-power switching power supply design. Due to its compact package and high efficiency, it can be effectively used in power management circuits for USB power supply and other small electronic devices.
2. **LED driver**:
This MOSFET can play an important role in LED driver circuits, especially in portable lighting devices and decorative lighting. Its low on-resistance and high switching frequency ensure the stability and light efficiency of the LED.
3. **Mobile devices**:
In mobile devices such as smartphones and tablets, K2373ZE-TL-E-VB can be used for power management, charging and other low-power applications to help extend battery life and improve overall performance.
4. **Smart home**:
This device is very suitable for various sensors and controllers in smart home systems, providing efficient power switching and signal transmission to ensure system reliability and response speed.
K2373ZE-TL-E-VB has become a key component in modern low-power electronic devices with its high performance and wide applicability, providing reliable solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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