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K2372-VB Product details
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K2372-VB MOSFET Product Introduction
K2372-VB is a high-performance **single N-channel** MOSFET in **TO247** package, designed for high voltage and high current applications. Its maximum **drain-source voltage (VDS)** can reach 500V, suitable for power management and power conversion applications requiring high voltage isolation. The **gate-source voltage (VGS)** of this MOSFET is rated at ±30V, providing a safe operating range. The threshold voltage (Vth) is 3.8V, which allows it to be turned on at a relatively low gate voltage, suitable for a variety of drive circuits. Its **on-resistance (RDS(ON))** is only 80mΩ at VGS=10V, which can significantly reduce conduction losses and improve overall system efficiency. The maximum drain current is 40A, and **SJ_Multi-EPI** technology is used to ensure its stability under high temperature and high frequency conditions.
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K2372-VB is a high-performance **single N-channel** MOSFET in **TO247** package, designed for high voltage and high current applications. Its maximum **drain-source voltage (VDS)** can reach 500V, suitable for power management and power conversion applications requiring high voltage isolation. The **gate-source voltage (VGS)** of this MOSFET is rated at ±30V, providing a safe operating range. The threshold voltage (Vth) is 3.8V, which allows it to be turned on at a relatively low gate voltage, suitable for a variety of drive circuits. Its **on-resistance (RDS(ON))** is only 80mΩ at VGS=10V, which can significantly reduce conduction losses and improve overall system efficiency. The maximum drain current is 40A, and **SJ_Multi-EPI** technology is used to ensure its stability under high temperature and high frequency conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: K2372-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Suitable for a wide temperature range.
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- **Model**: K2372-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Suitable for a wide temperature range.
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Domain and module applications：
Applications and module examples
K2372-VB is suitable for a variety of high voltage and high current application scenarios. Here are some specific application examples:
1. **High voltage power supply**: In high voltage power supply design, K2372-VB can withstand voltages up to 500V, suitable for use as a switching element, improve power efficiency and stability, and is widely used in industrial power supplies and medical equipment.
2. **Motor drive**: This MOSFET can be used as an efficient switch in motor drive applications, capable of controlling the start and stop of DC and AC motors, achieving efficient power transfer, and is suitable for power tools and electric vehicles.
3. **Inverter**: In photovoltaic inverters and wind power inverters, K2372-VB can be used as a power switch to handle the conversion from DC to AC, improve energy conversion efficiency, and is suitable for renewable energy systems.
4. **Charger**: This MOSFET can also be used in high-voltage chargers. It can switch quickly during the charging process to ensure efficient energy transmission and equipment safety. It is widely used in electric vehicle charging stations and high-voltage battery charging equipment.
K2372-VB is a high-performance MOSFET that is very suitable for various power management and drive circuits that require high voltage and high current.
K2372-VB is suitable for a variety of high voltage and high current application scenarios. Here are some specific application examples:
1. **High voltage power supply**: In high voltage power supply design, K2372-VB can withstand voltages up to 500V, suitable for use as a switching element, improve power efficiency and stability, and is widely used in industrial power supplies and medical equipment.
2. **Motor drive**: This MOSFET can be used as an efficient switch in motor drive applications, capable of controlling the start and stop of DC and AC motors, achieving efficient power transfer, and is suitable for power tools and electric vehicles.
3. **Inverter**: In photovoltaic inverters and wind power inverters, K2372-VB can be used as a power switch to handle the conversion from DC to AC, improve energy conversion efficiency, and is suitable for renewable energy systems.
4. **Charger**: This MOSFET can also be used in high-voltage chargers. It can switch quickly during the charging process to ensure efficient energy transmission and equipment safety. It is widely used in electric vehicle charging stations and high-voltage battery charging equipment.
K2372-VB is a high-performance MOSFET that is very suitable for various power management and drive circuits that require high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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