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K2315-VB Product details
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K2315-VB MOSFET Product Introduction
K2315-VB is a high-performance single N-channel MOSFET in a **SOT89 package**, designed for low-voltage applications. Its **drain-to-source voltage (VDS)** is **60V**, suitable for medium-voltage electronic devices and power management applications. The **gate-to-source voltage (VGS)** tolerance range of the device is ±20V, which can flexibly adapt to various control circuits. The **threshold voltage (Vth)** of K2315-VB is **1.7V**, ensuring that the MOSFET can be stably turned on at a lower gate drive voltage. At **VGS=10V**, the **on-resistance (RDS(ON))** of the device is **76mΩ**, which can effectively reduce power loss even under higher current loads. The maximum **drain current (ID)** is **5.5A**, which makes it perform well in multiple applications. K2315-VB adopts **Trench technology**, which maintains excellent performance under high-frequency operation and fast switching conditions, and is suitable for a wide range of power management and switching applications.
K2315-VB is a high-performance single N-channel MOSFET in a **SOT89 package**, designed for low-voltage applications. Its **drain-to-source voltage (VDS)** is **60V**, suitable for medium-voltage electronic devices and power management applications. The **gate-to-source voltage (VGS)** tolerance range of the device is ±20V, which can flexibly adapt to various control circuits. The **threshold voltage (Vth)** of K2315-VB is **1.7V**, ensuring that the MOSFET can be stably turned on at a lower gate drive voltage. At **VGS=10V**, the **on-resistance (RDS(ON))** of the device is **76mΩ**, which can effectively reduce power loss even under higher current loads. The maximum **drain current (ID)** is **5.5A**, which makes it perform well in multiple applications. K2315-VB adopts **Trench technology**, which maintains excellent performance under high-frequency operation and fast switching conditions, and is suitable for a wide range of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
1. **Package**: SOT89
This small package is suitable for compact circuit design, can effectively save space, and has good heat dissipation performance.
2. **Configuration**: Single N-channel
The single N-channel configuration makes K2315-VB suitable for switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 60V
Suitable for operation in medium voltage circuits, can meet the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range makes it adaptable to a variety of circuit designs and enhances design flexibility.
5. **Vth (Threshold Voltage)**: 1.7V
It can be stably turned on at a lower gate drive voltage, which improves the startup efficiency of the circuit.
6. **RDS(ON)**:
- 76mΩ @ VGS=10V
- 88mΩ @ VGS=4.5V
Lower on-resistance can significantly reduce power loss in the on state, thereby improving overall energy efficiency.
7. **ID(Drain Current)**: 5.5A
The maximum drain current is 5.5A, which can handle higher current loads and ensure reliability in various applications.
8. **Technology**: Trench
Trench technology ensures that the MOSFET has low on-resistance and good thermal performance, suitable for a variety of switching applications, especially under high frequency conditions.
1. **Package**: SOT89
This small package is suitable for compact circuit design, can effectively save space, and has good heat dissipation performance.
2. **Configuration**: Single N-channel
The single N-channel configuration makes K2315-VB suitable for switching and amplification circuits, with high efficiency and low power consumption.
3. **VDS (Drain to Source Voltage)**: 60V
Suitable for operation in medium voltage circuits, can meet the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range makes it adaptable to a variety of circuit designs and enhances design flexibility.
5. **Vth (Threshold Voltage)**: 1.7V
It can be stably turned on at a lower gate drive voltage, which improves the startup efficiency of the circuit.
6. **RDS(ON)**:
- 76mΩ @ VGS=10V
- 88mΩ @ VGS=4.5V
Lower on-resistance can significantly reduce power loss in the on state, thereby improving overall energy efficiency.
7. **ID(Drain Current)**: 5.5A
The maximum drain current is 5.5A, which can handle higher current loads and ensure reliability in various applications.
8. **Technology**: Trench
Trench technology ensures that the MOSFET has low on-resistance and good thermal performance, suitable for a variety of switching applications, especially under high frequency conditions.
Domain and module applications：
Applicable fields and application examples of modules
1. **Low-power switching power supply (SMPS)**
K2315-VB can be used for low-power **switch mode power supply**, optimizing power conversion and improving overall energy efficiency through efficient switching control.
2. **LED driver**
In the **LED driving circuit**, this MOSFET can accurately control the current of the LED, improve its brightness and stability, and reduce power consumption.
3. **Battery management system**
This device is suitable for **battery management system**, which can provide stable switching control during charging and discharging to ensure safe and efficient operation of the battery.
4. **Power tools**
K2315-VB can be used in the drive circuits of various **power tools**, providing reliable power management for the motor and improving the working efficiency and durability of the tool.
5. **Consumer Electronics**
This MOSFET is also suitable for **consumer electronics**, such as portable devices and smart home products, to provide efficient power control and extend battery life.
In summary, the K2315-VB MOSFET is an ideal choice for various power management, switching applications and consumer electronic devices with its excellent electrical characteristics and wide application applicability.
1. **Low-power switching power supply (SMPS)**
K2315-VB can be used for low-power **switch mode power supply**, optimizing power conversion and improving overall energy efficiency through efficient switching control.
2. **LED driver**
In the **LED driving circuit**, this MOSFET can accurately control the current of the LED, improve its brightness and stability, and reduce power consumption.
3. **Battery management system**
This device is suitable for **battery management system**, which can provide stable switching control during charging and discharging to ensure safe and efficient operation of the battery.
4. **Power tools**
K2315-VB can be used in the drive circuits of various **power tools**, providing reliable power management for the motor and improving the working efficiency and durability of the tool.
5. **Consumer Electronics**
This MOSFET is also suitable for **consumer electronics**, such as portable devices and smart home products, to provide efficient power control and extend battery life.
In summary, the K2315-VB MOSFET is an ideal choice for various power management, switching applications and consumer electronic devices with its excellent electrical characteristics and wide application applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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