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K22N50L-VB Product details
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K22N50L-VB MOSFET Product Introduction:
K22N50L-VB is a high-performance **single N-channel** MOSFET in **TO247** package, designed for high voltage and high power applications. The **drain-source voltage (VDS)** of this MOSFET is as high as 500V, which is suitable for operation in high voltage environments. Its gate-source voltage (VGS) is rated at ±30V, ensuring safety and stability under various conditions. The threshold voltage (Vth) is 3.8V, which enables it to turn on quickly at a relatively low gate voltage. At VGS=10V, the **on-resistance (RDS(ON))** is 80mΩ, which can effectively reduce conduction losses and support a maximum leakage current of 40A. Using **SJ_Multi-EPI** technology, K22N50L-VB performs well in high-frequency switching and power management applications, and is very suitable for use in industrial equipment, energy conversion, and electric vehicles.
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K22N50L-VB is a high-performance **single N-channel** MOSFET in **TO247** package, designed for high voltage and high power applications. The **drain-source voltage (VDS)** of this MOSFET is as high as 500V, which is suitable for operation in high voltage environments. Its gate-source voltage (VGS) is rated at ±30V, ensuring safety and stability under various conditions. The threshold voltage (Vth) is 3.8V, which enables it to turn on quickly at a relatively low gate voltage. At VGS=10V, the **on-resistance (RDS(ON))** is 80mΩ, which can effectively reduce conduction losses and support a maximum leakage current of 40A. Using **SJ_Multi-EPI** technology, K22N50L-VB performs well in high-frequency switching and power management applications, and is very suitable for use in industrial equipment, energy conversion, and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model**: K22N50L-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Suitable for a wide temperature range.
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- **Model**: K22N50L-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Suitable for a wide temperature range.
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Domain and module applications：
Applications and module examples:
K22N50L-VB is suitable for a variety of high-voltage and high-efficiency applications. Here are some specific application examples:
1. **Switching Power Supply**: K22N50L-VB performs well in switching power supplies (SMPS) and can operate stably at high voltages. It is suitable for AC-DC converters and high-efficiency DC-DC converters, providing high energy conversion efficiency.
2. **Inverter**: This MOSFET is widely used in photovoltaic and wind power inverters. It can efficiently convert direct current (DC) to alternating current (AC), playing a key role in renewable energy systems.
3. **Electric Vehicle Drive**: In the motor drive and charging system of electric vehicles, K22N50L-VB can be used to implement efficient power switches, supporting efficient operation of motors and fast charging of batteries.
4. **Industrial Automation**: This MOSFET can be used in industrial automation equipment, such as power tools and automated machinery, to provide reliable power management and control capabilities, improving equipment performance and efficiency.
With its high withstand voltage and low on-resistance characteristics, the K22N50L-VB is an ideal choice for a variety of high-voltage applications, which can effectively improve the performance and reliability of the overall system.
K22N50L-VB is suitable for a variety of high-voltage and high-efficiency applications. Here are some specific application examples:
1. **Switching Power Supply**: K22N50L-VB performs well in switching power supplies (SMPS) and can operate stably at high voltages. It is suitable for AC-DC converters and high-efficiency DC-DC converters, providing high energy conversion efficiency.
2. **Inverter**: This MOSFET is widely used in photovoltaic and wind power inverters. It can efficiently convert direct current (DC) to alternating current (AC), playing a key role in renewable energy systems.
3. **Electric Vehicle Drive**: In the motor drive and charging system of electric vehicles, K22N50L-VB can be used to implement efficient power switches, supporting efficient operation of motors and fast charging of batteries.
4. **Industrial Automation**: This MOSFET can be used in industrial automation equipment, such as power tools and automated machinery, to provide reliable power management and control capabilities, improving equipment performance and efficiency.
With its high withstand voltage and low on-resistance characteristics, the K22N50L-VB is an ideal choice for a variety of high-voltage applications, which can effectively improve the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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