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K2292-01S-VB Product details
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K2292-01S-VB MOSFET Product Introduction
K2292-01S-VB is a high-efficiency single N-channel MOSFET designed for medium and low voltage power management and switching applications. Its **drain to source voltage (VDS)** is **250V**, which can handle higher voltage loads and is suitable for a variety of power electronic equipment. The device's **gate to source voltage (VGS)** tolerance range is ±20V, providing flexible drive options. The **threshold voltage (Vth)** of K2292-01S-VB is **3V**, enabling it to be stably turned on at an appropriate gate voltage. At **VGS=10V**, the device's **on-resistance (RDS(ON))** is **640mΩ**, reducing power loss in the low on state. Its maximum **drain current (ID)** is **4.5A**, ensuring reliability under higher load conditions. Using **Trench technology**, the K2292-01S-VB MOSFET maintains good performance in high-frequency operation and is suitable for a variety of power management and switching applications.
K2292-01S-VB is a high-efficiency single N-channel MOSFET designed for medium and low voltage power management and switching applications. Its **drain to source voltage (VDS)** is **250V**, which can handle higher voltage loads and is suitable for a variety of power electronic equipment. The device's **gate to source voltage (VGS)** tolerance range is ±20V, providing flexible drive options. The **threshold voltage (Vth)** of K2292-01S-VB is **3V**, enabling it to be stably turned on at an appropriate gate voltage. At **VGS=10V**, the device's **on-resistance (RDS(ON))** is **640mΩ**, reducing power loss in the low on state. Its maximum **drain current (ID)** is **4.5A**, ensuring reliability under higher load conditions. Using **Trench technology**, the K2292-01S-VB MOSFET maintains good performance in high-frequency operation and is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
TO252 package has good heat dissipation performance and is suitable for a variety of power management and drive applications.
2. **Configuration**: Single N-channel
N-channel configuration enables K2292-01S-VB to have high efficiency and low power consumption in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 250V
Suitable for operation in medium and low voltage circuits, meeting the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
Wide gate voltage range ensures design flexibility and is suitable for a variety of circuit designs.
5. **Vth (Threshold Voltage)**: 3V
Ensure that the MOSFET can be reliably turned on under appropriate gate drive voltage.
6. **RDS(ON)**:
- 640mΩ @ VGS=10V
Lower on-resistance reduces power loss in the on state and improves energy efficiency.
7. **ID(Drain Current)**: 4.5A
Maximum drain current is 4.5A, which can meet the requirements of high current load.
8. **Technology**: Trench
This technology ensures that the MOSFET has low on-resistance and good thermal performance, suitable for a variety of power switching applications.
1. **Package**: TO252
TO252 package has good heat dissipation performance and is suitable for a variety of power management and drive applications.
2. **Configuration**: Single N-channel
N-channel configuration enables K2292-01S-VB to have high efficiency and low power consumption in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 250V
Suitable for operation in medium and low voltage circuits, meeting the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
Wide gate voltage range ensures design flexibility and is suitable for a variety of circuit designs.
5. **Vth (Threshold Voltage)**: 3V
Ensure that the MOSFET can be reliably turned on under appropriate gate drive voltage.
6. **RDS(ON)**:
- 640mΩ @ VGS=10V
Lower on-resistance reduces power loss in the on state and improves energy efficiency.
7. **ID(Drain Current)**: 4.5A
Maximum drain current is 4.5A, which can meet the requirements of high current load.
8. **Technology**: Trench
This technology ensures that the MOSFET has low on-resistance and good thermal performance, suitable for a variety of power switching applications.
Domain and module applications：
Applicable fields and application examples of modules
1. **Switching mode power supply (SMPS)**
K2292-01S-VB is suitable for **switching mode power supply (SMPS)**, which can effectively manage power conversion and ensure efficient power utilization.
2. **Motor driver**
This MOSFET is widely used in various **motor drivers**, providing stable switching performance for motors to meet the needs of high current applications.
3. **LED drive circuit**
K2292-01S-VB can control the switching of high current LED lights in **LED drive circuit**, ensuring its stability and low power loss.
4. **Battery management system**
In the **battery management system**, K2292-01S-VB can be used to control the charging and discharging process, improve the safety and efficiency of the battery, and ensure long life and high performance.
5. **Consumer Electronics**
This device is also suitable for use in a variety of **consumer electronics**, such as battery-powered devices and portable devices, to provide efficient power management solutions.
In summary, K2292-01S-VB MOSFET is widely used in switching power supplies, motor drives, LED drives, battery management, consumer electronics and other fields due to its excellent electrical characteristics, providing efficient and stable performance support for these applications.
1. **Switching mode power supply (SMPS)**
K2292-01S-VB is suitable for **switching mode power supply (SMPS)**, which can effectively manage power conversion and ensure efficient power utilization.
2. **Motor driver**
This MOSFET is widely used in various **motor drivers**, providing stable switching performance for motors to meet the needs of high current applications.
3. **LED drive circuit**
K2292-01S-VB can control the switching of high current LED lights in **LED drive circuit**, ensuring its stability and low power loss.
4. **Battery management system**
In the **battery management system**, K2292-01S-VB can be used to control the charging and discharging process, improve the safety and efficiency of the battery, and ensure long life and high performance.
5. **Consumer Electronics**
This device is also suitable for use in a variety of **consumer electronics**, such as battery-powered devices and portable devices, to provide efficient power management solutions.
In summary, K2292-01S-VB MOSFET is widely used in switching power supplies, motor drives, LED drives, battery management, consumer electronics and other fields due to its excellent electrical characteristics, providing efficient and stable performance support for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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