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K2231Q-VB Product details
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K2231Q-VB MOSFET Product Introduction:
K2231Q-VB is a high-efficiency **single N-channel** MOSFET in **TO252** package, suitable for a variety of medium voltage applications. The **drain-source voltage (VDS)** of this MOSFET can reach 60V, which is suitable for occasions with certain voltage requirements. Its gate-source voltage (VGS) is rated at ±20V, ensuring stability and safety during operation. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to turn on quickly at a lower gate voltage. At VGS=4.5V, the **on-resistance (RDS(ON))** is 85mΩ, and at VGS=10V it is 73mΩ, which can effectively reduce switching losses, and the maximum leakage current can reach 18A. Using **Trench** technology, K2231Q-VB performs well in high-frequency switching applications and is very suitable for power management and drive circuits.
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K2231Q-VB is a high-efficiency **single N-channel** MOSFET in **TO252** package, suitable for a variety of medium voltage applications. The **drain-source voltage (VDS)** of this MOSFET can reach 60V, which is suitable for occasions with certain voltage requirements. Its gate-source voltage (VGS) is rated at ±20V, ensuring stability and safety during operation. The threshold voltage (Vth) is 1.7V, allowing the MOSFET to turn on quickly at a lower gate voltage. At VGS=4.5V, the **on-resistance (RDS(ON))** is 85mΩ, and at VGS=10V it is 73mΩ, which can effectively reduce switching losses, and the maximum leakage current can reach 18A. Using **Trench** technology, K2231Q-VB performs well in high-frequency switching applications and is very suitable for power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Model**: K2231Q-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
- **Operating temperature**: Typically rated over a wide temperature range.
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- **Model**: K2231Q-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
- **Operating temperature**: Typically rated over a wide temperature range.
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Domain and module applications：
Applications and module examples:
K2231Q-VB is particularly suitable for a variety of medium voltage and high efficiency applications. Here are some specific application examples:
1. **DC-DC converter**: K2231Q-VB is widely used in DC-DC converters and is suitable for use as a switching element. It can achieve voltage conversion at high efficiency and meet the needs of power management systems.
2. **LED drive circuit**: This MOSFET can be used in LED drive applications. By accurately controlling the current of the LED, efficient brightness adjustment can be achieved. It is suitable for commercial and home lighting.
3. **Battery charger**: In battery management systems, K2231Q-VB can be used to achieve efficient charge and discharge control, improve charging speed and battery efficiency, and is suitable for use in portable electronic devices.
4. **Small motor drive**: This MOSFET is also suitable for small motor control, such as fans and toys, and achieves precise motor control through high-frequency switching.
With its excellent performance and outstanding Trench technology, K2231Q-VB is an ideal choice for a variety of power management and drive circuits, which can improve the efficiency and reliability of the overall system.
K2231Q-VB is particularly suitable for a variety of medium voltage and high efficiency applications. Here are some specific application examples:
1. **DC-DC converter**: K2231Q-VB is widely used in DC-DC converters and is suitable for use as a switching element. It can achieve voltage conversion at high efficiency and meet the needs of power management systems.
2. **LED drive circuit**: This MOSFET can be used in LED drive applications. By accurately controlling the current of the LED, efficient brightness adjustment can be achieved. It is suitable for commercial and home lighting.
3. **Battery charger**: In battery management systems, K2231Q-VB can be used to achieve efficient charge and discharge control, improve charging speed and battery efficiency, and is suitable for use in portable electronic devices.
4. **Small motor drive**: This MOSFET is also suitable for small motor control, such as fans and toys, and achieves precise motor control through high-frequency switching.
With its excellent performance and outstanding Trench technology, K2231Q-VB is an ideal choice for a variety of power management and drive circuits, which can improve the efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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