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K2199-VB Product details
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K2199-VB MOSFET Product Introduction
K2199-VB is a high-efficiency single N-channel MOSFET designed for medium voltage and current applications. Its **drain to source voltage (VDS)** is **250V**, which is suitable for handling a variety of power management tasks. The **gate to source voltage (VGS)** tolerance range of K2199-VB is ±20V, ensuring its reliable operation in a variety of circuits. The **threshold voltage (Vth)** of the device is **3V**, which is convenient for stable turn-on at an appropriate gate voltage. Its **on-resistance (RDS(ON))** at **VGS=10V** is **640mΩ**, providing good power efficiency and reducing conduction losses. The maximum **drain current (ID)** is **4.5A**, making it suitable for applications with high current loads. Using **Trench technology**, K2199-VB MOSFET not only has low power loss in the on state, but also maintains good performance in high-frequency operation, making it very suitable for use in various power electronic devices.
K2199-VB is a high-efficiency single N-channel MOSFET designed for medium voltage and current applications. Its **drain to source voltage (VDS)** is **250V**, which is suitable for handling a variety of power management tasks. The **gate to source voltage (VGS)** tolerance range of K2199-VB is ±20V, ensuring its reliable operation in a variety of circuits. The **threshold voltage (Vth)** of the device is **3V**, which is convenient for stable turn-on at an appropriate gate voltage. Its **on-resistance (RDS(ON))** at **VGS=10V** is **640mΩ**, providing good power efficiency and reducing conduction losses. The maximum **drain current (ID)** is **4.5A**, making it suitable for applications with high current loads. Using **Trench technology**, K2199-VB MOSFET not only has low power loss in the on state, but also maintains good performance in high-frequency operation, making it very suitable for use in various power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
TO252 package has excellent thermal performance and is suitable for a variety of medium power applications.
2. **Configuration**: Single N-channel
N-channel configuration enables K2199-VB to exhibit high efficiency and low power consumption in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 250V
Suitable for operation in medium and high voltage environments, meeting the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range ensures design flexibility and is suitable for a variety of circuit designs.
5. **Vth (Threshold Voltage)**: 3V
Under the appropriate gate drive voltage, ensure that the MOSFET can be reliably turned on.
6. **RDS(ON)**: 640mΩ @ VGS=10V
Lower on-resistance reduces power loss in the on state and improves energy efficiency.
7. **ID(Drain Current)**: 4.5A
Maximum drain current is 4.5A, which can meet the requirements of high current load.
8. **Technology**: Trench
This technology ensures that the MOSFET has low on-resistance and efficient thermal performance, suitable for a variety of power switching applications.
1. **Package**: TO252
TO252 package has excellent thermal performance and is suitable for a variety of medium power applications.
2. **Configuration**: Single N-channel
N-channel configuration enables K2199-VB to exhibit high efficiency and low power consumption in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 250V
Suitable for operation in medium and high voltage environments, meeting the needs of a variety of power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±20V
The wide gate voltage range ensures design flexibility and is suitable for a variety of circuit designs.
5. **Vth (Threshold Voltage)**: 3V
Under the appropriate gate drive voltage, ensure that the MOSFET can be reliably turned on.
6. **RDS(ON)**: 640mΩ @ VGS=10V
Lower on-resistance reduces power loss in the on state and improves energy efficiency.
7. **ID(Drain Current)**: 4.5A
Maximum drain current is 4.5A, which can meet the requirements of high current load.
8. **Technology**: Trench
This technology ensures that the MOSFET has low on-resistance and efficient thermal performance, suitable for a variety of power switching applications.
Domain and module applications：
Applicable fields and application examples of modules
1. **Switching mode power supply (SMPS)**
K2199-VB is suitable for **switching mode power supply (SMPS)**, which can effectively manage power conversion and ensure efficient power utilization.
2. **Motor driver**
This MOSFET is widely used in various **motor drivers** to provide stable switching performance for motors to meet the needs of high current applications.
3. **LED drive circuit**
K2199-VB can control the switching of high current LED lights in **LED drive circuit**, ensuring its stability and low power loss.
4. **Battery management system**
In the **battery management system**, K2199-VB can be used to control the charging and discharging process, improve the safety and efficiency of the battery, and ensure long life and high performance.
5. **Industrial Automation Control**
K2199-VB is suitable for **industrial automation control systems**, driving relays and other loads, and providing efficient power management to ensure the normal operation of the equipment.
In short, K2199-VB MOSFET is widely used in switching power supplies, motor drives, LED drives, battery management, industrial automation and other fields with its superior electrical characteristics, providing efficient and stable performance support for these applications.
1. **Switching mode power supply (SMPS)**
K2199-VB is suitable for **switching mode power supply (SMPS)**, which can effectively manage power conversion and ensure efficient power utilization.
2. **Motor driver**
This MOSFET is widely used in various **motor drivers** to provide stable switching performance for motors to meet the needs of high current applications.
3. **LED drive circuit**
K2199-VB can control the switching of high current LED lights in **LED drive circuit**, ensuring its stability and low power loss.
4. **Battery management system**
In the **battery management system**, K2199-VB can be used to control the charging and discharging process, improve the safety and efficiency of the battery, and ensure long life and high performance.
5. **Industrial Automation Control**
K2199-VB is suitable for **industrial automation control systems**, driving relays and other loads, and providing efficient power management to ensure the normal operation of the equipment.
In short, K2199-VB MOSFET is widely used in switching power supplies, motor drives, LED drives, battery management, industrial automation and other fields with its superior electrical characteristics, providing efficient and stable performance support for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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