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K2147-01R-VB Product details
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Product Introduction:
K2147-01R-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is up to 900V, suitable for various high-voltage power management and conversion systems. The device has a threshold voltage of 3.5V, an on-resistance (RDS(ON)) of 750mΩ @ VGS=10V, and a maximum drain current (ID) of up to 9A. K2147-01R-VB uses SJ_Multi-EPI technology to ensure its reliability and efficiency under high temperature and high current conditions, making it an ideal choice for high-voltage switching applications.
K2147-01R-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is up to 900V, suitable for various high-voltage power management and conversion systems. The device has a threshold voltage of 3.5V, an on-resistance (RDS(ON)) of 750mΩ @ VGS=10V, and a maximum drain current (ID) of up to 9A. K2147-01R-VB uses SJ_Multi-EPI technology to ensure its reliability and efficiency under high temperature and high current conditions, making it an ideal choice for high-voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Please refer to the product manual for the specific temperature range, usually -55°C to 150°C.
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: Please refer to the product manual for the specific temperature range, usually -55°C to 150°C.
Domain and module applications：
Application fields and modules:
1. **High-voltage power management**: K2147-01R-VB is very suitable for switching power supplies (SMPS), which can operate stably at high voltage, support power conversion and regulation, improve the energy efficiency and stability of the system, and is widely used in power adapters and industrial power systems.
2. **Inverter**: This MOSFET can be used in photovoltaic inverters and other power inverters, responsible for converting DC power to AC power, suitable for solar power generation and wind power systems, and can effectively handle high voltage and current.
3. **Motor control**: In motor drive applications, K2147-01R-VB can be used as a switching element, capable of withstanding currents up to 9A, suitable for industrial automation, home appliances, and electric vehicles, etc., to achieve efficient motor control.
4. **Power electronic equipment**: This device is widely used in high-voltage power electronic modules, such as boost converters and buck converters, and can provide efficient voltage conversion and current regulation.
5. **Lighting control system**: K2147-01R-VB is suitable for high-voltage lighting control systems. It can ensure stability and reliability in different environments and is widely used in commercial lighting, stage lighting and other occasions.
The high-voltage withstand capability and excellent performance of K2147-01R-VB make it an important component in modern power management and high-voltage applications, and can provide efficient and reliable solutions for various electronic systems.
1. **High-voltage power management**: K2147-01R-VB is very suitable for switching power supplies (SMPS), which can operate stably at high voltage, support power conversion and regulation, improve the energy efficiency and stability of the system, and is widely used in power adapters and industrial power systems.
2. **Inverter**: This MOSFET can be used in photovoltaic inverters and other power inverters, responsible for converting DC power to AC power, suitable for solar power generation and wind power systems, and can effectively handle high voltage and current.
3. **Motor control**: In motor drive applications, K2147-01R-VB can be used as a switching element, capable of withstanding currents up to 9A, suitable for industrial automation, home appliances, and electric vehicles, etc., to achieve efficient motor control.
4. **Power electronic equipment**: This device is widely used in high-voltage power electronic modules, such as boost converters and buck converters, and can provide efficient voltage conversion and current regulation.
5. **Lighting control system**: K2147-01R-VB is suitable for high-voltage lighting control systems. It can ensure stability and reliability in different environments and is widely used in commercial lighting, stage lighting and other occasions.
The high-voltage withstand capability and excellent performance of K2147-01R-VB make it an important component in modern power management and high-voltage applications, and can provide efficient and reliable solutions for various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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