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K2116-VB Product details
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K2116-VB MOSFET Product Introduction
K2116-VB is a high-voltage single N-channel MOSFET designed for high voltage and medium power applications. Its **VDS (drain to source voltage)** is as high as **650V**, and the **VGS (gate to source voltage)** has a tolerance range of ±30V, which is suitable for use in power electronics and industrial equipment. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. The **RDS(ON)** of K2116-VB at **VGS=10V** is **680mΩ**. Although the on-resistance is relatively high, it can still effectively reduce power loss in some applications. The maximum **drain current (ID)** is **12A**, which can handle medium current loads. The device uses **Plannar technology** and is suitable for applications that require high voltage resistance and good stability.
K2116-VB is a high-voltage single N-channel MOSFET designed for high voltage and medium power applications. Its **VDS (drain to source voltage)** is as high as **650V**, and the **VGS (gate to source voltage)** has a tolerance range of ±30V, which is suitable for use in power electronics and industrial equipment. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. The **RDS(ON)** of K2116-VB at **VGS=10V** is **680mΩ**. Although the on-resistance is relatively high, it can still effectively reduce power loss in some applications. The maximum **drain current (ID)** is **12A**, which can handle medium current loads. The device uses **Plannar technology** and is suitable for applications that require high voltage resistance and good stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
TO220F package provides excellent heat dissipation performance, suitable for medium power high voltage applications, and is easy to match with a heat sink.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to exhibit high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments, suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving the overall efficiency of the system.
6. **RDS(ON)**: 680mΩ @ VGS=10V
On-resistance affects power loss to a certain extent, and is suitable for some applications that do not require high on-resistance.
7. **ID(leakage current)**: 12A
Maximum leakage current is suitable for medium current applications and can meet the needs of various power electronic designs.
8. **Technology**: Plannar
Plannar technology ensures high voltage resistance and stability of MOSFET, suitable for various high-voltage applications.
1. **Package**: TO220F
TO220F package provides excellent heat dissipation performance, suitable for medium power high voltage applications, and is easy to match with a heat sink.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to exhibit high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments, suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving the overall efficiency of the system.
6. **RDS(ON)**: 680mΩ @ VGS=10V
On-resistance affects power loss to a certain extent, and is suitable for some applications that do not require high on-resistance.
7. **ID(leakage current)**: 12A
Maximum leakage current is suitable for medium current applications and can meet the needs of various power electronic designs.
8. **Technology**: Plannar
Plannar technology ensures high voltage resistance and stability of MOSFET, suitable for various high-voltage applications.
Domain and module applications：
Applicable fields and application examples of modules
1. **Power converter**
K2116-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively manage power conversion at high voltages and ensure efficient power utilization.
2. **Inverter**
This MOSFET is suitable for various **inverter** applications such as solar inverters and motor drives, and can handle high voltage and medium current switching requirements to provide efficient energy conversion.
3. **Electric vehicle charging system**
K2116-VB can be used in **electric vehicle chargers** to handle high voltage and current, ensuring the stability and high efficiency of the charging process.
4. **Industrial control**
In the field of industrial automation, K2116-VB is suitable for **driving motors and controlling relays**, providing reliable switching capabilities in high voltage environments to ensure the normal operation of equipment.
5. **Household appliances**
This device can be used in some high-voltage household appliances, such as microwave ovens and electric water heaters, and can achieve effective power control and switching functions under high voltage.
In summary, the K2116-VB MOSFET is suitable for switching power supplies, inverters, electric vehicle charging systems, industrial control, household appliances and other fields due to its high voltage and medium current characteristics.
1. **Power converter**
K2116-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively manage power conversion at high voltages and ensure efficient power utilization.
2. **Inverter**
This MOSFET is suitable for various **inverter** applications such as solar inverters and motor drives, and can handle high voltage and medium current switching requirements to provide efficient energy conversion.
3. **Electric vehicle charging system**
K2116-VB can be used in **electric vehicle chargers** to handle high voltage and current, ensuring the stability and high efficiency of the charging process.
4. **Industrial control**
In the field of industrial automation, K2116-VB is suitable for **driving motors and controlling relays**, providing reliable switching capabilities in high voltage environments to ensure the normal operation of equipment.
5. **Household appliances**
This device can be used in some high-voltage household appliances, such as microwave ovens and electric water heaters, and can achieve effective power control and switching functions under high voltage.
In summary, the K2116-VB MOSFET is suitable for switching power supplies, inverters, electric vehicle charging systems, industrial control, household appliances and other fields due to its high voltage and medium current characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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