K2112-VB Product details
Product introduction:
K2112-VB is a high-efficiency single N-channel MOSFET with SOT89 package type, designed for medium voltage applications. The device has a maximum drain-source voltage (VDS) of 100V, suitable for various power management and signal processing circuits. Its threshold voltage (Vth) is 1.8V, which enables switching operation at a lower driving voltage. With its trench technology, K2112-VB achieves low on-resistance (RDS(ON) is 125mΩ@VGS=4.5V and 102mΩ@VGS=10V), significantly improving the energy efficiency of the circuit and reducing power consumption. The maximum drain current (ID) is 4.2A, which enables it to work stably under high load conditions and is an ideal switching solution in modern electronic design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Package type**: SOT89
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.2A
- **Technology**: Trench
Domain and module applications:
1. **Power management**
K2112-VB performs well in power management applications, especially in switching power supplies (SMPS) and DC-DC converters. Due to its high voltage withstand capability of up to 100V, it can effectively handle voltage changes in the power system, while the low on-resistance helps to reduce energy loss, thereby improving the overall efficiency of the system and meeting the needs of modern electronic products for high-efficiency power supplies.
2. **LED driver**
K2112-VB is also widely used in LED driver circuits. Its good switching characteristics and stability make it suitable for driving high-brightness LED lamps and light strips, ensuring stable operation and high-brightness output of LEDs, and suitable for lighting and display applications.
3. **Signal switch**
Due to its low on-resistance, K2112-VB is very suitable for use as a signal switch. This MOSFET can be used in audio amplifiers, video signal processors, and various sensor interfaces to provide reliable signal switching and efficient power control, and is widely used in consumer electronics and communication equipment.
Through these specific application area examples, the K2112-VB provides engineers with efficient and reliable solutions for medium voltage power supply and signal processing needs.
Technical support:
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