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K2111-VB Product details
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1. Product Introduction:
K2111-VB is a high-performance single N-channel MOSFET in a compact SOT89 package, designed for medium voltage and high current applications. Its rated drain-source voltage (VDS) is 60V and the gate-source voltage (VGS) range is ±20V, ensuring reliability under a variety of operating conditions. The device has a gate threshold voltage (Vth) of 1.7V, an on-resistance (RDS(ON)) of 88mΩ at VGS of 4.5V and 76mΩ at VGS of 10V, and supports a drain current (ID) of up to 5.5A. Based on Trench technology, K2111-VB provides excellent switching performance and thermal stability, and is ideal for a wide range of power management and drive circuits.
K2111-VB is a high-performance single N-channel MOSFET in a compact SOT89 package, designed for medium voltage and high current applications. Its rated drain-source voltage (VDS) is 60V and the gate-source voltage (VGS) range is ±20V, ensuring reliability under a variety of operating conditions. The device has a gate threshold voltage (Vth) of 1.7V, an on-resistance (RDS(ON)) of 88mΩ at VGS of 4.5V and 76mΩ at VGS of 10V, and supports a drain current (ID) of up to 5.5A. Based on Trench technology, K2111-VB provides excellent switching performance and thermal stability, and is ideal for a wide range of power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
2. Detailed parameter description:
- **Package form**: SOT89
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology type**: Trench technology
- **Package form**: SOT89
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Drain current (ID)**: 5.5A
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples:
1. **Power management**: K2111-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can effectively improve power conversion efficiency and reduce energy loss, making it suitable for use in consumer electronic devices.
2. **Motor drive**: In motor control circuits, K2111-VB can be used as a switching device to achieve efficient current control. Its high current carrying capacity makes it suitable for driving small motors and stepper motors to meet the needs of industrial and automation systems.
3. **LED drive**: This MOSFET is also suitable for high-power LED drive applications. In commercial lighting and LED lamps, the high efficiency and low heat generation characteristics of K2111-VB can ensure the stability and long life of LEDs.
4. **Portable Electronic Devices**: In mobile devices and portable electronic products, the compact package and good performance of K2111-VB make it very suitable for battery management and charging circuits to achieve efficient power management.
Through the above application cases, K2111-VB MOSFET demonstrates its wide applicability in the field of medium voltage, high efficiency and high reliability requirements, and can meet the needs of a variety of electronic applications.
1. **Power management**: K2111-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can effectively improve power conversion efficiency and reduce energy loss, making it suitable for use in consumer electronic devices.
2. **Motor drive**: In motor control circuits, K2111-VB can be used as a switching device to achieve efficient current control. Its high current carrying capacity makes it suitable for driving small motors and stepper motors to meet the needs of industrial and automation systems.
3. **LED drive**: This MOSFET is also suitable for high-power LED drive applications. In commercial lighting and LED lamps, the high efficiency and low heat generation characteristics of K2111-VB can ensure the stability and long life of LEDs.
4. **Portable Electronic Devices**: In mobile devices and portable electronic products, the compact package and good performance of K2111-VB make it very suitable for battery management and charging circuits to achieve efficient power management.
Through the above application cases, K2111-VB MOSFET demonstrates its wide applicability in the field of medium voltage, high efficiency and high reliability requirements, and can meet the needs of a variety of electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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