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K2110-VB Product details
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Product Introduction:
K2110-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for medium and low voltage applications. The device has a drain-source voltage of 100V and a maximum drain current of 4.2A, combined with a low on-resistance of 125mΩ (@VGS=4.5V) and 102mΩ (@VGS=10V), ensuring efficient current transmission and low power consumption. K2110-VB uses advanced Trench technology to achieve good switching performance at lower gate-source voltages, making it very suitable for a variety of electronic applications.
K2110-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for medium and low voltage applications. The device has a drain-source voltage of 100V and a maximum drain current of 4.2A, combined with a low on-resistance of 125mΩ (@VGS=4.5V) and 102mΩ (@VGS=10V), ensuring efficient current transmission and low power consumption. K2110-VB uses advanced Trench technology to achieve good switching performance at lower gate-source voltages, making it very suitable for a variety of electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description:
- **Model**: K2110-VB
- **Package type**: SOT89
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.2A
- **Technology type**: Trench
- **Model**: K2110-VB
- **Package type**: SOT89
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 125mΩ @ VGS=4.5V
- 102mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4.2A
- **Technology type**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power management**:
K2110-VB is very suitable for various power management systems, such as DC-DC converters and switching power supply modules. Its low on-resistance and high efficiency can significantly reduce energy loss and improve the overall efficiency of the system. It is widely used in industrial and consumer electronics.
2. **Motor drive**:
This MOSFET can be used to control small motors and is suitable for use in devices such as household appliances and toys. K2110-VB can effectively manage the start-up and operation of the motor, ensuring efficient current control and stability.
3. **LED drive**:
In LED lighting systems, K2110-VB can be used as a driving switch element to ensure stable operation and brightness consistency of LEDs. Its low on-resistance characteristics reduce heat generation in high-power LED applications, improving system reliability and life.
4. **Battery Management System**:
K2110-VB can also be used in battery management systems (BMS) to help control the charging and discharging process. Its high efficiency and fast switching capabilities make it suitable for electric vehicles and renewable energy storage systems to ensure battery safety and performance.
With its excellent electrical characteristics and wide application adaptability, K2110-VB has become an indispensable component in modern electronic design, meeting a variety of power conversion and control applications with high efficiency and high reliability requirements.
1. **Power management**:
K2110-VB is very suitable for various power management systems, such as DC-DC converters and switching power supply modules. Its low on-resistance and high efficiency can significantly reduce energy loss and improve the overall efficiency of the system. It is widely used in industrial and consumer electronics.
2. **Motor drive**:
This MOSFET can be used to control small motors and is suitable for use in devices such as household appliances and toys. K2110-VB can effectively manage the start-up and operation of the motor, ensuring efficient current control and stability.
3. **LED drive**:
In LED lighting systems, K2110-VB can be used as a driving switch element to ensure stable operation and brightness consistency of LEDs. Its low on-resistance characteristics reduce heat generation in high-power LED applications, improving system reliability and life.
4. **Battery Management System**:
K2110-VB can also be used in battery management systems (BMS) to help control the charging and discharging process. Its high efficiency and fast switching capabilities make it suitable for electric vehicles and renewable energy storage systems to ensure battery safety and performance.
With its excellent electrical characteristics and wide application adaptability, K2110-VB has become an indispensable component in modern electronic design, meeting a variety of power conversion and control applications with high efficiency and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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