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K2109-VB Product details

Product introduction:

K2109-VB MOSFET Product Introduction:

K2109-VB is a high-efficiency **single N-channel** MOSFET designed for medium voltage applications. It adopts **SOT89** package with compact size and good heat dissipation performance. The **drain-source voltage (VDS)** of this MOSFET reaches 60V, which is suitable for a variety of power management and switching applications. The gate-source voltage (VGS) is rated at ±20V and can remain stable under voltage fluctuations. The threshold voltage (Vth) is 1.7V, ensuring reliable turn-on under low voltage conditions. At VGS=4.5V, the **on-resistance (RDS(ON))** is 88mΩ, and at VGS=10V it is 76mΩ, which shows its excellent performance under high current conditions, and the maximum leakage current can reach 5.5A. The use of **Trench** technology makes this MOSFET excellent in switching frequency and energy efficiency, and is particularly suitable for various high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 60V 1.7V 5.5A 76mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 60V 1.7V 5.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 60V 1.7V 5.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
Detailed parameter description:

- **Model**: K2109-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ @ VGS=4.5V
- 76mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5.5A
- **Technology**: Trench
- **Operating temperature**: Typically rated over a wide temperature range.

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Domain and module applications:

Application areas and module examples:

K2109-VB is particularly suitable for various medium voltage and high-efficiency switching circuits. The following are some specific application examples:

1. **DC-DC converter**: Due to its excellent on-resistance and moderate drain-source voltage, K2109-VB is an ideal choice in DC-DC converters, which can effectively improve conversion efficiency and reduce heat generation, and is suitable for use in various portable electronic devices.

2. **Power management**: This MOSFET can be used in power management systems, including load switches, regulated power supplies, and power distribution circuits, providing fast and reliable switching capabilities to ensure the stability and efficiency of the power supply.

3. **LED driver**: In LED lighting applications, K2109-VB can efficiently control the switching of LEDs, and is suitable for use in various lighting solutions and home appliances to improve the accuracy of brightness control.

4. **Motor drive**: This MOSFET can also be used in small motor control circuits, especially in applications that require fast response and high efficiency, such as home appliances and toy motor control, to meet the current and power requirements.

With its high performance and superior technical design, the K2109-VB is an ideal choice for medium voltage applications in many electronic devices, which can improve the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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