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K2101-01MR-VB Product details
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Product Introduction: K2101-01MR-VB
K2101-01MR-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) reaches 800V, suitable for a variety of high-voltage power management and power control applications. The device has an on-resistance (RDS(ON)) of 1100mΩ at VGS of 10V and a current capability of up to 5A. K2101-01MR-VB uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, suitable for long-term stable operation in harsh environments.
K2101-01MR-VB is a high-performance N-channel power MOSFET in TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) reaches 800V, suitable for a variety of high-voltage power management and power control applications. The device has an on-resistance (RDS(ON)) of 1100mΩ at VGS of 10V and a current capability of up to 5A. K2101-01MR-VB uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, suitable for long-term stable operation in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules:
1. **High-voltage power converters**
The K2101-01MR-VB is widely used in high-voltage power converters, including switching power supplies and inverters. Its high breakdown voltage of 800V enables it to handle high-voltage inputs, ensuring the stability and efficiency of the power supply.
2. **Motor control systems**
This MOSFET is often used in motor control applications, such as motor drive circuits and industrial equipment control. Its high current capability and low on-resistance enable it to effectively drive loads and provide reliable control solutions.
3. **Power electronic equipment**
The K2101-01MR-VB performs well in power electronic equipment and is suitable for various power conversion applications, such as DC-DC converters and power factor correction (PFC) circuits. Its excellent conduction performance can improve the overall conversion efficiency.
4. **Renewable energy applications**
In renewable energy systems (such as solar inverters), K2101-01MR-VB is also widely used, which can efficiently convert and manage the power obtained from solar panels to adapt to high voltage and high current working environments.
In summary, K2101-01MR-VB performs well in high voltage and high current applications, and is particularly suitable for power management, motor control, renewable energy and other fields, providing users with efficient and stable solutions.
1. **High-voltage power converters**
The K2101-01MR-VB is widely used in high-voltage power converters, including switching power supplies and inverters. Its high breakdown voltage of 800V enables it to handle high-voltage inputs, ensuring the stability and efficiency of the power supply.
2. **Motor control systems**
This MOSFET is often used in motor control applications, such as motor drive circuits and industrial equipment control. Its high current capability and low on-resistance enable it to effectively drive loads and provide reliable control solutions.
3. **Power electronic equipment**
The K2101-01MR-VB performs well in power electronic equipment and is suitable for various power conversion applications, such as DC-DC converters and power factor correction (PFC) circuits. Its excellent conduction performance can improve the overall conversion efficiency.
4. **Renewable energy applications**
In renewable energy systems (such as solar inverters), K2101-01MR-VB is also widely used, which can efficiently convert and manage the power obtained from solar panels to adapt to high voltage and high current working environments.
In summary, K2101-01MR-VB performs well in high voltage and high current applications, and is particularly suitable for power management, motor control, renewable energy and other fields, providing users with efficient and stable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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