K20S60-VB Product details
Product introduction:
K20S60-VB is an N-channel power MOSFET in TO247 package, designed for high-voltage applications. It has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) tolerance of ±30V, and a turn-on voltage (Vth) of 3.5V. This MOSFET uses SJ_Multi-EPI technology, with an on-resistance (RDS(ON)) as low as 160mΩ@VGS=10V, and supports a maximum continuous drain current (ID) of 20A. The high voltage and high current characteristics of K20S60-VB make it very suitable for various power supply and switch control applications, especially in high-voltage occasions that require high efficiency and stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package Type**: TO247
- **Configuration**: Single N-channel
- **Drain-Source Voltage(VDS)**: 650V
- **Gate-Source Voltage(VGS)**: ±30V
- **Throw-Through Voltage(Vth)**: 3.5V
- **On-Resistance(RDS(ON))**: 160mΩ @ VGS=10V
- **Drain Current(ID)**: 20A
- **Technology Type**: SJ_Multi-EPI
- **Operating Temperature Range**: -55°C ~ 150°C
- **Maximum Power Dissipation**: 60W (under proper heat dissipation conditions)
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Domain and module applications:
1. **Switching Power Supply (SMPS)**: K20S60-VB is widely used in switching power supplies. It can efficiently handle high voltage DC power supply and is suitable for DC-DC converters and AC-DC converters to help improve the energy efficiency of the overall system and reduce energy loss.
2. **Motor Drive Control**: This MOSFET can be used in motor drive and control circuits, especially in application scenarios requiring high voltage and high current, to ensure smooth operation and fast response of the motor under different load conditions.
3. **Photovoltaic Inverter**: In solar power generation systems, K20S60-VB is the core switching element of photovoltaic inverters, responsible for converting DC power into AC power, ensuring maximum photovoltaic energy output with high efficiency and stability.
4. **Electric Vehicle Charging Equipment**: This model of MOSFET is also suitable for electric vehicle charging piles and charging management systems. It can efficiently handle the high voltage and high current required during the charging process, ensuring the safety and efficiency of the charging process.
In summary, the high voltage withstand capability, excellent conduction performance and strong thermal management capabilities of K20S60-VB make it an ideal choice for a variety of high-efficiency power management and control applications.
Technical support:
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