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K20S60L-VB Product details
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K20S60L-VB MOSFET Product Introduction
K20S60L-VB is a high-voltage single N-channel MOSFET designed for high voltage and high power applications. Its **VDS (drain to source voltage)** is **650V**, and **VGS (gate to source voltage)** can withstand ±30V, which is suitable for power electronics and industrial applications. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. Its **RDS(ON)** at **VGS=10V** is **160mΩ**, which makes the MOSFET have a lower resistance when it is turned on, thereby effectively reducing power loss. The maximum **drain current (ID)** is **20A**, which can handle higher current loads. It adopts **SJ_Multi-EPI technology**, which improves the voltage resistance and conduction performance of the device, ensuring stability and reliability in harsh environments.
K20S60L-VB is a high-voltage single N-channel MOSFET designed for high voltage and high power applications. Its **VDS (drain to source voltage)** is **650V**, and **VGS (gate to source voltage)** can withstand ±30V, which is suitable for power electronics and industrial applications. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. Its **RDS(ON)** at **VGS=10V** is **160mΩ**, which makes the MOSFET have a lower resistance when it is turned on, thereby effectively reducing power loss. The maximum **drain current (ID)** is **20A**, which can handle higher current loads. It adopts **SJ_Multi-EPI technology**, which improves the voltage resistance and conduction performance of the device, ensuring stability and reliability in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package**: TO247
TO247 package provides excellent heat dissipation performance, suitable for high-power applications, and easy to match with the heat sink.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to show high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments, suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving system efficiency.
6. **RDS(ON)**: 160mΩ @ VGS=10V
Low on-resistance reduces power loss during conduction, helping to improve system efficiency.
7. **ID(Drain Current)**: 20A
Maximum drain current makes this device suitable for high current applications, meeting the needs of multiple power electronics designs.
8. **Technology**: SJ_Multi-EPI
SJ_Multi-EPI technology improves the withstand voltage and conduction performance of the MOSFET, ensuring stable operation under harsh working conditions.
1. **Package**: TO247
TO247 package provides excellent heat dissipation performance, suitable for high-power applications, and easy to match with the heat sink.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to show high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments, suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving system efficiency.
6. **RDS(ON)**: 160mΩ @ VGS=10V
Low on-resistance reduces power loss during conduction, helping to improve system efficiency.
7. **ID(Drain Current)**: 20A
Maximum drain current makes this device suitable for high current applications, meeting the needs of multiple power electronics designs.
8. **Technology**: SJ_Multi-EPI
SJ_Multi-EPI technology improves the withstand voltage and conduction performance of the MOSFET, ensuring stable operation under harsh working conditions.
Domain and module applications：
Applicable fields and application examples of modules
1. **Switching mode power supply (SMPS)**
K20S60L-VB is widely used in **Switching mode power supply (SMPS)** and **DC-DC converter**, which can effectively manage power conversion at high voltage and ensure efficient power utilization.
2. **Inverter**
This MOSFET is suitable for various **inverter** applications, such as solar inverters and motor drives, and can handle high voltage and high current switching requirements to provide efficient energy conversion.
3. **Electric vehicle charging system**
K20S60L-VB can be used in **Electric vehicle chargers**, which can handle high voltage and current to ensure the stability and high efficiency of the charging process.
4. **Power module**
In power modules, such as **power amplifiers** and **power management units**, this MOSFET can provide efficient power switching functions to ensure stable operation of the system.
5. **Industrial Control**
In the field of industrial automation, K20S60L-VB is suitable for **driving motors and controlling relays**, providing reliable switching capabilities in high-voltage environments to ensure the normal operation of equipment.
In summary, K20S60L-VB MOSFET is suitable for switching power supplies, inverters, electric vehicle charging systems, power modules, industrial control and other fields due to its high voltage and high current characteristics.
1. **Switching mode power supply (SMPS)**
K20S60L-VB is widely used in **Switching mode power supply (SMPS)** and **DC-DC converter**, which can effectively manage power conversion at high voltage and ensure efficient power utilization.
2. **Inverter**
This MOSFET is suitable for various **inverter** applications, such as solar inverters and motor drives, and can handle high voltage and high current switching requirements to provide efficient energy conversion.
3. **Electric vehicle charging system**
K20S60L-VB can be used in **Electric vehicle chargers**, which can handle high voltage and current to ensure the stability and high efficiency of the charging process.
4. **Power module**
In power modules, such as **power amplifiers** and **power management units**, this MOSFET can provide efficient power switching functions to ensure stable operation of the system.
5. **Industrial Control**
In the field of industrial automation, K20S60L-VB is suitable for **driving motors and controlling relays**, providing reliable switching capabilities in high-voltage environments to ensure the normal operation of equipment.
In summary, K20S60L-VB MOSFET is suitable for switching power supplies, inverters, electric vehicle charging systems, power modules, industrial control and other fields due to its high voltage and high current characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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