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K20P04M1-VB Product details

Product introduction:

1. K20P04M1-VB MOSFET Product Introduction
K20P04M1-VB is a high-efficiency single-channel N-type MOSFET in TO252 package, designed for high-power applications. The product has a maximum drain-source voltage (VDS) of 40V and can operate stably in a variety of power management and switching applications. Its gate-source voltage (VGS) range is ±20V, ensuring good performance under different working environments. The turn-on voltage (Vth) is 2.5V, showing good switching characteristics. When VGS is 4.5V, the on-resistance (RDS(ON)) is 14mΩ, and it is even lower at 12mΩ when VGS is 10V, which makes K20P04M1-VB perform well in high-current applications. The maximum drain current (ID) can reach 55A, which is suitable for circuits with strict requirements on energy efficiency and low heat.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 55A 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. K20P04M1-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- When VGS = 4.5V: 14mΩ
- When VGS = 10V: 12mΩ
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Up to 70W (typical)
- **Input capacitance (Ciss)**: About 1800pF (typical)
- **Package Pins**:
- Pin 1: Drain
- Pin 2: Source
- Pin 3: Gate

Domain and module applications:

III. K20P04M1-VB Application Fields and Module Examples
1. **Switching Power Supply (SMPS)**: The K20P04M1-VB MOSFET is particularly suitable for use in switching power supply modules, and can effectively handle voltages up to 40V and currents up to 55A. This feature makes it excel in high-efficiency power management, reducing power consumption and heat generation, and improving overall system efficiency.

2. **Motor Drive**: In motor control systems, the K20P04M1-VB is able to handle high currents, making it suitable for motor drive modules in industrial automation. Its fast switching capability ensures high efficiency and stability when the motor is started and stopped.

3. **Battery Management System (BMS)**: In the management of lithium batteries and other high-energy density batteries, this MOSFET can be used for switching control of charging and discharging. Its low on-resistance characteristics can reduce heat generation, thereby improving battery safety and performance.

4. **LED drive circuit**: K20P04M1-VB is also suitable for high-power LED drive applications, and can efficiently drive LED lamps to ensure their brightness and stability. It is widely used in commercial lighting and automotive lighting.

These application examples demonstrate the wide applicability of K20P04M1-VB, especially in power management and control systems that require high current and high efficiency, and can meet the stringent requirements of modern electronic devices for performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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