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K20J50D-VB Product details
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K20J50D-VB MOSFET Product Introduction:
K20J50D-VB is a high-performance **single N-channel** MOSFET designed for high-voltage applications. It adopts **TO3P** package to provide excellent thermal management and mechanical strength. The **drain-source voltage (VDS)** of this MOSFET is as high as 600V, making it suitable for operation in high-voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring its stability under voltage fluctuation conditions. The threshold voltage (Vth) is 3.5V, ensuring reliable switching operation. Under the condition of VGS=10V, the **on-resistance (RDS(ON))** is 190mΩ, which can support a leakage current of up to 20A. Using **SJ_Multi-EPI** technology, it excels in switching frequency and power loss, suitable for a variety of high-efficiency applications.
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K20J50D-VB is a high-performance **single N-channel** MOSFET designed for high-voltage applications. It adopts **TO3P** package to provide excellent thermal management and mechanical strength. The **drain-source voltage (VDS)** of this MOSFET is as high as 600V, making it suitable for operation in high-voltage environments. The gate-source voltage (VGS) is rated at ±30V, ensuring its stability under voltage fluctuation conditions. The threshold voltage (Vth) is 3.5V, ensuring reliable switching operation. Under the condition of VGS=10V, the **on-resistance (RDS(ON))** is 190mΩ, which can support a leakage current of up to 20A. Using **SJ_Multi-EPI** technology, it excels in switching frequency and power loss, suitable for a variety of high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
- **Model**: K20J50D-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Typically rated over a wide temperature range.
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- **Model**: K20J50D-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature**: Typically rated over a wide temperature range.
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Domain and module applications：
Applications and module examples:
The K20J50D-VB is particularly suitable for high-voltage switching and power conversion modules due to its 600V VDS rating. Here are some application examples:
1. **High-voltage switching power supply**: The K20J50D-VB is ideal for high-voltage switching power supply applications, especially in AC-DC and DC-DC converters, which can operate stably at high voltages, improve energy efficiency and reduce heat loss.
2. **Motor drive system**: This MOSFET can be widely used in motor control circuits such as industrial motor drives, home appliances and HVAC systems. It supports currents up to 20A and can effectively control the start, run and stop of motors.
3. **Lighting control**: The K20J50D-VB is suitable for high-voltage lighting applications such as LED driver circuits and ballasts, providing an efficient switching solution in controlling current and light output.
4. **Battery Management System (BMS)**: In battery management for renewable energy systems and electric vehicles, this MOSFET can be used for battery charge and discharge control, ensuring safe and efficient operation and improving overall energy efficiency.
With its high drain-source voltage and superior SJ_Multi-EPI technology, the K20J50D-VB is an ideal choice for high-voltage, low-current applications in the industrial, commercial and energy sectors.
The K20J50D-VB is particularly suitable for high-voltage switching and power conversion modules due to its 600V VDS rating. Here are some application examples:
1. **High-voltage switching power supply**: The K20J50D-VB is ideal for high-voltage switching power supply applications, especially in AC-DC and DC-DC converters, which can operate stably at high voltages, improve energy efficiency and reduce heat loss.
2. **Motor drive system**: This MOSFET can be widely used in motor control circuits such as industrial motor drives, home appliances and HVAC systems. It supports currents up to 20A and can effectively control the start, run and stop of motors.
3. **Lighting control**: The K20J50D-VB is suitable for high-voltage lighting applications such as LED driver circuits and ballasts, providing an efficient switching solution in controlling current and light output.
4. **Battery Management System (BMS)**: In battery management for renewable energy systems and electric vehicles, this MOSFET can be used for battery charge and discharge control, ensuring safe and efficient operation and improving overall energy efficiency.
With its high drain-source voltage and superior SJ_Multi-EPI technology, the K20J50D-VB is an ideal choice for high-voltage, low-current applications in the industrial, commercial and energy sectors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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