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K20A60-VB Product details
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K20A60-VB MOSFET Product Introduction
K20A60-VB is a high-voltage single N-channel MOSFET designed for high voltage and high power applications. Its **VDS (drain to source voltage)** is **650V**, and **VGS (gate to source voltage)** can withstand ±30V, making it suitable for use in power electronic equipment. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. Its **RDS(ON)** at **VGS=10V** is **160mΩ**, which makes it have a lower resistance when turned on, effectively reducing power loss. The maximum **drain current (ID)** of the device is **20A**, which can handle higher current loads. It adopts **SJ_Multi-EPI technology**, which improves the voltage resistance and conduction performance of the device, ensuring stability in harsh environments.
K20A60-VB is a high-voltage single N-channel MOSFET designed for high voltage and high power applications. Its **VDS (drain to source voltage)** is **650V**, and **VGS (gate to source voltage)** can withstand ±30V, making it suitable for use in power electronic equipment. The **threshold voltage (Vth)** of the device is **3.5V**, ensuring that it works normally under a reasonable gate drive voltage. Its **RDS(ON)** at **VGS=10V** is **160mΩ**, which makes it have a lower resistance when turned on, effectively reducing power loss. The maximum **drain current (ID)** of the device is **20A**, which can handle higher current loads. It adopts **SJ_Multi-EPI technology**, which improves the voltage resistance and conduction performance of the device, ensuring stability in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
1. **Package**: TO220F
TO220F package provides excellent heat dissipation capability, suitable for use in high-power applications, and convenient for heat sink installation.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to exhibit high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments and is suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing the design flexibility and scope of application.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving the efficiency of the system.
6. **RDS(ON)**: 160mΩ @ VGS=10V
Low on-resistance reduces power loss during conduction, helping to improve system efficiency.
7. **ID(Drain Current)**: 20A
Maximum drain current makes this device suitable for high current applications, meeting the needs of multiple power electronics designs.
8. **Technology**: SJ_Multi-EPI
This technology improves the withstand voltage and conduction performance of the MOSFET, ensuring stable operation under harsh working conditions.
1. **Package**: TO220F
TO220F package provides excellent heat dissipation capability, suitable for use in high-power applications, and convenient for heat sink installation.
2. **Configuration**: Single N-channel
N-channel configuration enables this MOSFET to exhibit high efficiency and low loss in switching and amplification circuits.
3. **VDS (Drain to Source Voltage)**: 650V
High voltage capability enables it to work reliably in high voltage environments and is suitable for power electronics applications.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wider gate voltage, increasing the design flexibility and scope of application.
5. **Vth (Threshold Voltage)**: 3.5V
Ensures effective turn-on at a reasonable gate voltage, improving the efficiency of the system.
6. **RDS(ON)**: 160mΩ @ VGS=10V
Low on-resistance reduces power loss during conduction, helping to improve system efficiency.
7. **ID(Drain Current)**: 20A
Maximum drain current makes this device suitable for high current applications, meeting the needs of multiple power electronics designs.
8. **Technology**: SJ_Multi-EPI
This technology improves the withstand voltage and conduction performance of the MOSFET, ensuring stable operation under harsh working conditions.
Domain and module applications：
Application examples of applicable fields and modules
1. **Power converters**
K20A60-VB can be widely used in **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively manage power conversion at high voltages and ensure efficient power utilization.
2. **Inverters**
This MOSFET is very suitable for **inverter** applications such as solar inverters and motor drives, which can handle high voltage and high current switching requirements and provide efficient energy conversion.
3. **Electric vehicle charging system**
K20A60-VB can be used in **electric vehicle chargers**, which can handle high voltage and current to ensure the stability and efficiency of the charging process.
4. **Power modules**
In various power modules, such as **power amplifiers** and **power management units**, this MOSFET can provide efficient power switching functions to ensure stable operation of the system.
5. **Industrial control**
In the field of industrial automation, K20A60-VB can be used to **drive motors and control relays**, providing reliable switching capabilities in high-voltage environments to ensure the normal operation of equipment.
In summary, K20A60-VB MOSFET is suitable for power converters, inverters, electric vehicle charging systems, power modules, industrial control and other fields due to its high voltage and high current characteristics.
1. **Power converters**
K20A60-VB can be widely used in **switching power supplies (SMPS)** and **DC-DC converters**, which can effectively manage power conversion at high voltages and ensure efficient power utilization.
2. **Inverters**
This MOSFET is very suitable for **inverter** applications such as solar inverters and motor drives, which can handle high voltage and high current switching requirements and provide efficient energy conversion.
3. **Electric vehicle charging system**
K20A60-VB can be used in **electric vehicle chargers**, which can handle high voltage and current to ensure the stability and efficiency of the charging process.
4. **Power modules**
In various power modules, such as **power amplifiers** and **power management units**, this MOSFET can provide efficient power switching functions to ensure stable operation of the system.
5. **Industrial control**
In the field of industrial automation, K20A60-VB can be used to **drive motors and control relays**, providing reliable switching capabilities in high-voltage environments to ensure the normal operation of equipment.
In summary, K20A60-VB MOSFET is suitable for power converters, inverters, electric vehicle charging systems, power modules, industrial control and other fields due to its high voltage and high current characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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