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K20A20D-VB Product details
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1. K20A20D-VB MOSFET Product Introduction
K20A20D-VB is a high voltage single-channel N-type MOSFET in TO220F package, designed for applications requiring higher voltage and current. Its maximum drain-source voltage (VDS) is 200V, suitable for a variety of high-voltage power management and switching applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, ensuring its stability in harsh environments. The turn-on voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 58mΩ at VGS of 10V, enabling it to exhibit excellent performance under high current conditions. The maximum drain current (ID) of K20A20D-VB can reach 20A, suitable for a variety of power conversion and power management applications.
K20A20D-VB is a high voltage single-channel N-type MOSFET in TO220F package, designed for applications requiring higher voltage and current. Its maximum drain-source voltage (VDS) is 200V, suitable for a variety of high-voltage power management and switching applications. The gate-source voltage (VGS) range of this MOSFET is ±20V, ensuring its stability in harsh environments. The turn-on voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 58mΩ at VGS of 10V, enabling it to exhibit excellent performance under high current conditions. The maximum drain current (ID) of K20A20D-VB can reach 20A, suitable for a variety of power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. K20A20D-VB MOSFET Detailed parameter description
- **Package form**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- When VGS = 10V: 58mΩ
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Up to 40W (typical)
- **Input capacitance (Ciss)**: About 2000pF (typical)
- **Package pins**:
- Pin 1: Drain
- Pin 2: Source
- Pin 3: Gate
- **Package form**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- When VGS = 10V: 58mΩ
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Up to 40W (typical)
- **Input capacitance (Ciss)**: About 2000pF (typical)
- **Package pins**:
- Pin 1: Drain
- Pin 2: Source
- Pin 3: Gate
Domain and module applications：
III. K20A20D-VB Application Fields and Module Examples
1. **High-voltage power management system**: K20A20D-VB MOSFET is particularly suitable for use in high-voltage switching power supplies and uninterruptible power supplies (UPS). It can handle voltages up to 200V and currents up to 20A, meeting the stringent requirements of modern electronic equipment for power efficiency and stability.
2. **Motor drive**: In industrial automation and electric vehicle motor control, K20A20D-VB can provide high-current drive capabilities to ensure efficient operation of motors under different loads, and is suitable for various motor control modules.
3. **Battery management system (BMS)**: In the management of lithium batteries and other high-energy density batteries, this MOSFET can be used for switch control of charging and discharging. Its high voltage characteristics make it suitable for efficient current monitoring and management in a variety of battery configurations.
4. **LED driver circuit**: K20A20D-VB is also suitable for high-power LED lighting applications. It can handle large currents to ensure the brightness and stability of LEDs and is widely used in commercial lighting and landscape lighting.
These application examples demonstrate the wide applicability of K20A20D-VB, especially in power management and control systems that require high voltage and high current to meet the performance and efficiency requirements of modern electronic devices.
1. **High-voltage power management system**: K20A20D-VB MOSFET is particularly suitable for use in high-voltage switching power supplies and uninterruptible power supplies (UPS). It can handle voltages up to 200V and currents up to 20A, meeting the stringent requirements of modern electronic equipment for power efficiency and stability.
2. **Motor drive**: In industrial automation and electric vehicle motor control, K20A20D-VB can provide high-current drive capabilities to ensure efficient operation of motors under different loads, and is suitable for various motor control modules.
3. **Battery management system (BMS)**: In the management of lithium batteries and other high-energy density batteries, this MOSFET can be used for switch control of charging and discharging. Its high voltage characteristics make it suitable for efficient current monitoring and management in a variety of battery configurations.
4. **LED driver circuit**: K20A20D-VB is also suitable for high-power LED lighting applications. It can handle large currents to ensure the brightness and stability of LEDs and is widely used in commercial lighting and landscape lighting.
These application examples demonstrate the wide applicability of K20A20D-VB, especially in power management and control systems that require high voltage and high current to meet the performance and efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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