K2095N-VB Product details
Product introduction:
K2095N-VB is a high-efficiency single N-channel MOSFET in a TO220F package, designed for applications that require higher current and low on-resistance. It has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 45A, making it suitable for a variety of power management and switching applications. The MOSFET has a threshold voltage of 1.7V and a gate-source voltage range of ±20V. It can achieve good conduction performance at low gate voltage and is suitable for a wide range of drive circuits and power conversion systems. The channel technology used is Trench, which can effectively reduce the on-resistance (RDS(ON)) to 27mΩ @ VGS=10V, improve energy efficiency and reduce heat generation.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 27mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench
- **Maximum power dissipation**: 62W (typical)
- **Operating temperature range**: -55°C ~ 150°C
- **Input capacitance (Ciss)**: 2600pF (typical)
- **Output capacitance (Coss)**: 135pF (Typical value)
- **Reverse recovery time (trr)**: 120ns (Typical value)
Domain and module applications:
1. **Power conversion and management**
K2095N-VB is widely used in power conversion modules such as switching power supplies (SMPS) and DC-DC converters due to its low on-resistance and high current capability. This enables it to effectively improve efficiency and reduce power loss in power management, and is suitable for power supply design of various electronic devices.
2. **Motor drive and control**
This MOSFET is also suitable for motor drive circuits, especially in high-efficiency motor control and drive systems. It can withstand currents up to 45A and can provide stable performance in applications that require fast switching, suitable for products such as power tools and household appliances.
3. **LED lighting drive**
K2095N-VB can be used in LED lighting modules, especially high-power LED drive circuits. Its good conduction performance and low on-resistance enable it to effectively reduce energy loss and improve lighting efficiency in LED driving.
4. **Battery Management System**
In addition, this MOSFET is also suitable for battery management systems (BMS), providing efficient switch control during battery charging and discharging. K2095N-VB can ensure that the battery operates at a safe voltage and current, and is suitable for battery management in electric vehicles and renewable energy systems.
With its excellent performance and diverse application areas, K2095N-VB provides a reliable solution for modern electronic products.
Technical support:
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