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K2084STL-E-VB Product details
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K2084STL-E-VB MOSFET Product Introduction
K2084STL-E-VB is a single N-channel MOSFET designed for low voltage, high current applications. Its **VDS (drain to source voltage)** is **30V**, **VGS (gate to source voltage)** can withstand ±20V, suitable for a variety of switching power supplies and drive circuits. The **threshold voltage (Vth)** of the device is **1.7V**, which ensures good switching performance, and **RDS(ON)** is **9mΩ** at **VGS=4.5V** and **7mΩ** at **VGS=10V**, which makes the MOSFET have extremely low resistance when turned on, thereby reducing power loss. The maximum **drain current (ID)** is **70A**, enabling it to handle high current applications. Using **Trench Technology**, this technology can provide lower on-resistance and higher switching efficiency, suitable for demanding power management systems.
K2084STL-E-VB is a single N-channel MOSFET designed for low voltage, high current applications. Its **VDS (drain to source voltage)** is **30V**, **VGS (gate to source voltage)** can withstand ±20V, suitable for a variety of switching power supplies and drive circuits. The **threshold voltage (Vth)** of the device is **1.7V**, which ensures good switching performance, and **RDS(ON)** is **9mΩ** at **VGS=4.5V** and **7mΩ** at **VGS=10V**, which makes the MOSFET have extremely low resistance when turned on, thereby reducing power loss. The maximum **drain current (ID)** is **70A**, enabling it to handle high current applications. Using **Trench Technology**, this technology can provide lower on-resistance and higher switching efficiency, suitable for demanding power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
TO252 package has good heat dissipation performance and is suitable for thermal management requirements in high power applications.
2. **Configuration**: Single N-channel
This MOSFET adopts N-channel configuration, which has higher efficiency and lower switching loss, and is widely used in various power supplies and drive circuits.
3. **VDS (Drain to Source Voltage)**: 30V
Suitable for low voltage applications and can cope with common voltage requirements.
4. **VGS (Gate to Source Voltage)**: ±20V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 1.7V
The low threshold voltage allows it to be turned on at a lower gate voltage, improving drive efficiency.
6. **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
Low on-resistance reduces power loss and improves power conversion efficiency.
7. **ID(leakage current)**: 70A
Suitable for high current applications and can meet the needs of a variety of power supplies and drive circuits.
8. **Technology**: Trench technology
Trench technology can effectively reduce on-resistance and improve switching performance and efficiency.
1. **Package**: TO252
TO252 package has good heat dissipation performance and is suitable for thermal management requirements in high power applications.
2. **Configuration**: Single N-channel
This MOSFET adopts N-channel configuration, which has higher efficiency and lower switching loss, and is widely used in various power supplies and drive circuits.
3. **VDS (Drain to Source Voltage)**: 30V
Suitable for low voltage applications and can cope with common voltage requirements.
4. **VGS (Gate to Source Voltage)**: ±20V
The device can withstand a wider gate voltage, increasing design flexibility.
5. **Vth (Threshold Voltage)**: 1.7V
The low threshold voltage allows it to be turned on at a lower gate voltage, improving drive efficiency.
6. **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
Low on-resistance reduces power loss and improves power conversion efficiency.
7. **ID(leakage current)**: 70A
Suitable for high current applications and can meet the needs of a variety of power supplies and drive circuits.
8. **Technology**: Trench technology
Trench technology can effectively reduce on-resistance and improve switching performance and efficiency.
Domain and module applications：
Applicable fields and application examples of the module
1. **Switching mode power supply (SMPS)**
K2084STL-E-VB can be widely used in **switching mode power supply (SMPS)**, especially in situations where high efficiency and low power consumption are required. Its low on-resistance enables it to maintain excellent energy efficiency even under high load conditions.
2. **Motor drive**
In motor drive applications, this MOSFET can effectively control the switching of the motor, provide fast response time and stable current control, and is suitable for **power tools**, **household appliances** and other fields.
3. **LED drive**
K2084STL-E-VB is also suitable for **LED drive circuits**, which can achieve high-efficiency current control at lower voltages, ensuring stable brightness and long life of LEDs.
4. **Battery Management System**
In the battery management system, this MOSFET can be used for **charging and discharging control**, and can effectively handle currents up to 70A to ensure that the battery is within a safe operating range.
5. **Power Module**
Among various power modules, K2084STL-E-VB can be used in **DC-DC converters** and **power distribution networks** to ensure efficient power conversion and distribution.
In summary, K2084STL-E-VB MOSFET is suitable for a variety of fields such as switching power supplies, motor drives, LED drives, battery management systems and power modules due to its low voltage and high current characteristics.
1. **Switching mode power supply (SMPS)**
K2084STL-E-VB can be widely used in **switching mode power supply (SMPS)**, especially in situations where high efficiency and low power consumption are required. Its low on-resistance enables it to maintain excellent energy efficiency even under high load conditions.
2. **Motor drive**
In motor drive applications, this MOSFET can effectively control the switching of the motor, provide fast response time and stable current control, and is suitable for **power tools**, **household appliances** and other fields.
3. **LED drive**
K2084STL-E-VB is also suitable for **LED drive circuits**, which can achieve high-efficiency current control at lower voltages, ensuring stable brightness and long life of LEDs.
4. **Battery Management System**
In the battery management system, this MOSFET can be used for **charging and discharging control**, and can effectively handle currents up to 70A to ensure that the battery is within a safe operating range.
5. **Power Module**
Among various power modules, K2084STL-E-VB can be used in **DC-DC converters** and **power distribution networks** to ensure efficient power conversion and distribution.
In summary, K2084STL-E-VB MOSFET is suitable for a variety of fields such as switching power supplies, motor drives, LED drives, battery management systems and power modules due to its low voltage and high current characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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