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K2040-VB Product details
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K2040-VB MOSFET Product Introduction
The K2040-VB is a high-voltage single N-channel MOSFET designed for power electronics applications that require reliable operation under high voltage conditions. Its **VDS (drain to source voltage)** is **650V** and its **VGS (gate to source voltage)** tolerance range is ±30V, enabling it to effectively handle high-power switching tasks. Its **threshold voltage (Vth)** is **3.5V**, ensuring a moderate gate drive voltage, and its **RDS(ON)** is **4300mΩ** at **VGS=10V**, which means it has a reasonable on-resistance in low to medium current switching applications. The device's maximum **drain current (ID)** is **2A**, making it ideal for low-power high-voltage applications. This MOSFET uses **planar technology**, which is known for its robustness and stability in high-voltage environments.
The K2040-VB is a high-voltage single N-channel MOSFET designed for power electronics applications that require reliable operation under high voltage conditions. Its **VDS (drain to source voltage)** is **650V** and its **VGS (gate to source voltage)** tolerance range is ±30V, enabling it to effectively handle high-power switching tasks. Its **threshold voltage (Vth)** is **3.5V**, ensuring a moderate gate drive voltage, and its **RDS(ON)** is **4300mΩ** at **VGS=10V**, which means it has a reasonable on-resistance in low to medium current switching applications. The device's maximum **drain current (ID)** is **2A**, making it ideal for low-power high-voltage applications. This MOSFET uses **planar technology**, which is known for its robustness and stability in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
The TO251 package provides excellent heat dissipation and compactness, suitable for thermal management in high power applications.
2. **Configuration**: Single N-channel
This MOSFET adopts N-channel configuration and is widely used in switching circuits because of its high efficiency and low losses during operation.
3. **VDS (Drain to Source Voltage)**: 650V
This high voltage capability makes it suitable for systems that require significant voltage margin.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wide range of gate voltages, making it flexible in various control circuits and driving conditions.
5. **Vth (Threshold Voltage)**: 3.5V
The threshold voltage defines the minimum gate voltage required to turn on the MOSFET. At 3.5V, the device is easy to drive with standard control circuits.
6. **RDS(ON) (On-Resistance)**: 4300mΩ @ VGS=10V
This resistance determines the power loss during operation. Although 4300mΩ is high, this MOSFET has been optimized for high voltage, low current switching.
7. **ID (Drain Current)**: 2A
The maximum current that the device can handle, making it suitable for low current, high voltage applications.
8. **Technology**: Planar
Planar technology is mature and reliable, especially in high voltage applications, providing stable performance.
1. **Package**: TO251
The TO251 package provides excellent heat dissipation and compactness, suitable for thermal management in high power applications.
2. **Configuration**: Single N-channel
This MOSFET adopts N-channel configuration and is widely used in switching circuits because of its high efficiency and low losses during operation.
3. **VDS (Drain to Source Voltage)**: 650V
This high voltage capability makes it suitable for systems that require significant voltage margin.
4. **VGS (Gate to Source Voltage)**: ±30V
The device can withstand a wide range of gate voltages, making it flexible in various control circuits and driving conditions.
5. **Vth (Threshold Voltage)**: 3.5V
The threshold voltage defines the minimum gate voltage required to turn on the MOSFET. At 3.5V, the device is easy to drive with standard control circuits.
6. **RDS(ON) (On-Resistance)**: 4300mΩ @ VGS=10V
This resistance determines the power loss during operation. Although 4300mΩ is high, this MOSFET has been optimized for high voltage, low current switching.
7. **ID (Drain Current)**: 2A
The maximum current that the device can handle, making it suitable for low current, high voltage applications.
8. **Technology**: Planar
Planar technology is mature and reliable, especially in high voltage applications, providing stable performance.
Domain and module applications：
Application examples of applicable fields and modules
1. **Power modules**
The K2040-VB can be used in **Switch Mode Power Supplies (SMPS)**, which require high voltage isolation and efficient power conversion. Its 650V rated voltage makes it ideal for use in the primary side switch of AC-DC converters.
2. **High Voltage Inverters**
Inverters, especially in industrial systems, often operate at high voltages. The K2040-VB is suitable for such applications as **Motor Control Drives** or **Uninterruptible Power Supplies (UPS)**, where high breakdown voltage and low current switching are critical.
3. **Heating Ventilation and Air Conditioning (HVAC)**
This MOSFET can be used in **HVAC systems**, especially in the control of high voltage fan, pump or compressor drives, where its high VDS helps to effectively manage system voltage spikes.
4. **Telecom Power Systems**
In telecom power distribution units, the K2040-VB can be used in **rectifiers** and **power conditioning units** to ensure reliability in the presence of voltage fluctuations.
5. **Consumer Electronics (High Voltage Modules)**
For consumer electronics that handle mains power, such as **smart appliances** and **LED lighting drivers**, this MOSFET can handle the power switching required to drive high voltage circuits.
In summary, the K2040-VB MOSFET is suitable for power modules, high voltage inverters, HVAC systems, telecom power systems, and high voltage consumer electronics applications with its high voltage rating and planar technology.
1. **Power modules**
The K2040-VB can be used in **Switch Mode Power Supplies (SMPS)**, which require high voltage isolation and efficient power conversion. Its 650V rated voltage makes it ideal for use in the primary side switch of AC-DC converters.
2. **High Voltage Inverters**
Inverters, especially in industrial systems, often operate at high voltages. The K2040-VB is suitable for such applications as **Motor Control Drives** or **Uninterruptible Power Supplies (UPS)**, where high breakdown voltage and low current switching are critical.
3. **Heating Ventilation and Air Conditioning (HVAC)**
This MOSFET can be used in **HVAC systems**, especially in the control of high voltage fan, pump or compressor drives, where its high VDS helps to effectively manage system voltage spikes.
4. **Telecom Power Systems**
In telecom power distribution units, the K2040-VB can be used in **rectifiers** and **power conditioning units** to ensure reliability in the presence of voltage fluctuations.
5. **Consumer Electronics (High Voltage Modules)**
For consumer electronics that handle mains power, such as **smart appliances** and **LED lighting drivers**, this MOSFET can handle the power switching required to drive high voltage circuits.
In summary, the K2040-VB MOSFET is suitable for power modules, high voltage inverters, HVAC systems, telecom power systems, and high voltage consumer electronics applications with its high voltage rating and planar technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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