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K2033-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
K2033-VB is a single N-channel MOSFET in SOT23-3 package with good switching performance and low on-resistance, suitable for low current applications. The main features of the device include 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 1.7V gate threshold voltage (Vth). It is based on Trench technology, has high integration and power density, and is ideal for portable devices and other low-power applications.
K2033-VB is a single N-channel MOSFET in SOT23-3 package with good switching performance and low on-resistance, suitable for low current applications. The main features of the device include 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 1.7V gate threshold voltage (Vth). It is based on Trench technology, has high integration and power density, and is ideal for portable devices and other low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
2. Detailed parameter description:
- **Package form**: SOT23-3
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology type**: Trench technology
- **Package form**: SOT23-3
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples:
1. **Portable electronic devices**: Due to the low on-resistance and small package form of K2033-VB, it is very suitable for use in power management modules in portable devices such as smartphones, tablets, etc. For example, as a load switch control, it can effectively reduce the power consumption in the circuit.
2. **Battery-powered devices**: This MOSFET can provide stable switching performance at low voltage and is suitable for battery management systems, especially when used under low current loads. It can be used in battery protection circuits to help extend the use time of the device.
3. **Signal conditioning circuit**: The low drain current characteristics of K2033-VB make it suitable for small signal switching and conditioning circuits, and are widely used in wireless devices, remote controls, and low-power communication modules.
4. **Low-power switching applications**: The high VDS and low RDS(ON) of K2033-VB make it very suitable for low-power switching applications, such as LED drivers, chargers, and sensor circuits, which can improve the energy efficiency of the circuit.
Through these application examples, it can be seen that K2033-VB MOSFET is suitable for a variety of low-current application scenarios that require efficient switching and low power consumption.
1. **Portable electronic devices**: Due to the low on-resistance and small package form of K2033-VB, it is very suitable for use in power management modules in portable devices such as smartphones, tablets, etc. For example, as a load switch control, it can effectively reduce the power consumption in the circuit.
2. **Battery-powered devices**: This MOSFET can provide stable switching performance at low voltage and is suitable for battery management systems, especially when used under low current loads. It can be used in battery protection circuits to help extend the use time of the device.
3. **Signal conditioning circuit**: The low drain current characteristics of K2033-VB make it suitable for small signal switching and conditioning circuits, and are widely used in wireless devices, remote controls, and low-power communication modules.
4. **Low-power switching applications**: The high VDS and low RDS(ON) of K2033-VB make it very suitable for low-power switching applications, such as LED drivers, chargers, and sensor circuits, which can improve the energy efficiency of the circuit.
Through these application examples, it can be seen that K2033-VB MOSFET is suitable for a variety of low-current application scenarios that require efficient switching and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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