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K2018-01S-VB Product details
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Product Introduction
K2018-01S-VB is a high-performance single N-channel MOSFET in a TO252 package designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 60V, the device is suitable for operation in a variety of power electronics environments. The threshold voltage (Vth) of the K2018-01S-VB is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, indicating that it has superior conductivity during switching operations and can effectively reduce energy losses. With its maximum drain current (ID) of 18A, the K2018-01S-VB is ideal for power management and drive applications that require fast switching and high efficiency.
K2018-01S-VB is a high-performance single N-channel MOSFET in a TO252 package designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 60V, the device is suitable for operation in a variety of power electronics environments. The threshold voltage (Vth) of the K2018-01S-VB is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, indicating that it has superior conductivity during switching operations and can effectively reduce energy losses. With its maximum drain current (ID) of 18A, the K2018-01S-VB is ideal for power management and drive applications that require fast switching and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and modules
K2018-01S-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**. These power management devices require high efficiency and fast response to minimize energy loss. The low on-resistance of this MOSFET enables it to perform well under high load conditions, improving the energy efficiency of the overall system.
In addition, K2018-01S-VB is also very suitable for **motor drive** applications, especially where precise control of current and speed is required. Its 18A leakage current capability enables it to effectively drive motors while maintaining low heat generation, enhancing system reliability and stability.
This MOSFET also has important applications in **LED drive** and **lighting control** modules. Its superior switching characteristics can quickly adjust the brightness of LEDs and achieve efficient dimming control. At the same time, K2018-01S-VB can effectively reduce power loss and extend the service life of LED lamps in lighting control systems.
Overall, K2018-01S-VB is suitable for a variety of power electronics applications requiring high efficiency and stability due to its excellent electrical performance and high reliability, making it an ideal choice for designers and engineers in the medium and low voltage fields.
K2018-01S-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**. These power management devices require high efficiency and fast response to minimize energy loss. The low on-resistance of this MOSFET enables it to perform well under high load conditions, improving the energy efficiency of the overall system.
In addition, K2018-01S-VB is also very suitable for **motor drive** applications, especially where precise control of current and speed is required. Its 18A leakage current capability enables it to effectively drive motors while maintaining low heat generation, enhancing system reliability and stability.
This MOSFET also has important applications in **LED drive** and **lighting control** modules. Its superior switching characteristics can quickly adjust the brightness of LEDs and achieve efficient dimming control. At the same time, K2018-01S-VB can effectively reduce power loss and extend the service life of LED lamps in lighting control systems.
Overall, K2018-01S-VB is suitable for a variety of power electronics applications requiring high efficiency and stability due to its excellent electrical performance and high reliability, making it an ideal choice for designers and engineers in the medium and low voltage fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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