中文
English
K2018-01L-VB Product details
Back to previous pageProduct introduction：
Product Introduction
K2018-01L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 60V, the maximum drain current (ID) is 18A, and it has excellent conduction performance and low on-resistance. At VGS of 10V, its on-resistance (RDS(ON)) is 73mΩ, and at VGS of 4.5V it is 85mΩ. With a threshold voltage (Vth) of 1.7V, this MOSFET has good switching performance and high efficiency, and is suitable for use in various power control and power management applications.
K2018-01L-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 60V, the maximum drain current (ID) is 18A, and it has excellent conduction performance and low on-resistance. At VGS of 10V, its on-resistance (RDS(ON)) is 73mΩ, and at VGS of 4.5V it is 85mΩ. With a threshold voltage (Vth) of 1.7V, this MOSFET has good switching performance and high efficiency, and is suitable for use in various power control and power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The K2018-01L-VB MOSFET is suitable for multiple applications, and its low on-resistance and high leakage current capability make it an ideal choice for power management and power conversion applications. First, it is widely used in DC-DC converters and power supply modules, which can efficiently convert electrical energy and maintain a stable output voltage. In addition, in motor drive and control systems, the K2018-01L-VB can effectively control current and enhance the performance of the motor.
This MOSFET is also suitable for automotive electronic devices such as electric power steering systems and battery management systems to ensure reliability and efficiency under high voltage and high power conditions. Due to its efficient thermal management and superior switching characteristics, the K2018-01L-VB is also very suitable for power modules in lighting and consumer electronics, helping to reduce energy consumption and improve device performance. In short, the K2018-01L-VB has become a preferred component in various power and drive applications due to its excellent parameter performance.
The K2018-01L-VB MOSFET is suitable for multiple applications, and its low on-resistance and high leakage current capability make it an ideal choice for power management and power conversion applications. First, it is widely used in DC-DC converters and power supply modules, which can efficiently convert electrical energy and maintain a stable output voltage. In addition, in motor drive and control systems, the K2018-01L-VB can effectively control current and enhance the performance of the motor.
This MOSFET is also suitable for automotive electronic devices such as electric power steering systems and battery management systems to ensure reliability and efficiency under high voltage and high power conditions. Due to its efficient thermal management and superior switching characteristics, the K2018-01L-VB is also very suitable for power modules in lighting and consumer electronics, helping to reduce energy consumption and improve device performance. In short, the K2018-01L-VB has become a preferred component in various power and drive applications due to its excellent parameter performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
