K2013-VB Product details
Product introduction:
K2013-VB is a high-performance single N-channel MOSFET designed for a variety of electronic applications, especially in high-voltage and high-efficiency environments. It uses a TO220F package, can withstand drain-source voltages (VDS) up to 200V, and supports a maximum drain current (ID) of 20A. The device has a gate-source voltage (VGS) range of ±20V, with a good safety margin. The threshold voltage (Vth) of K2013-VB is 3V, ensuring fast turn-on at a lower gate voltage. At the same time, its on-resistance (RDS(ON)) is only 58mΩ at VGS=10V, showing excellent conductivity and low power consumption. Manufactured using Trench technology, K2013-VB has high switching speeds and low switching losses, making it suitable for a variety of high-frequency and high-efficiency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: K2013-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications:
1. **Switching power supply**: K2013-VB is widely used in switching power supply (SMPS), which can effectively control the on and off of the power supply, improve the conversion efficiency of the power supply, and is suitable for AC-DC and DC-DC converters to help reduce system energy consumption.
2. **Motor control**: In motor drive applications, this MOSFET can provide current stably and is suitable for various motor control modules, such as brushless DC motor (BLDC) controllers, to improve the response speed and efficiency of the motor.
3. **Power management module**: K2013-VB is suitable for power management and distribution modules, which can effectively control voltage and current, ensure the stability and safety of the system, and is widely used in computers, servers and network equipment.
4. **Inverter**: In photovoltaic and wind power inverters, this device can effectively convert high-voltage DC to AC, support the efficient use of renewable energy, and is suitable for solar power generation systems and wind power generation equipment.
5. **Consumer Electronics**: K2013-VB is also suitable for various consumer electronics products, such as power tools and household appliances. With its high performance and stability, it provides reliable power management solutions for electronic devices.
In summary, K2013-VB is a high-efficiency, high-voltage single N-channel MOSFET suitable for multiple fields such as switching power supplies, motor control, power management, inverters and consumer electronics, and can perform well in high-load and high-efficiency applications.
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