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K2013-VB Product details

Product introduction:

K2013-VB Product Introduction

K2013-VB is a high-performance single N-channel MOSFET designed for a variety of electronic applications, especially in high-voltage and high-efficiency environments. It uses a TO220F package, can withstand drain-source voltages (VDS) up to 200V, and supports a maximum drain current (ID) of 20A. The device has a gate-source voltage (VGS) range of ±20V, with a good safety margin. The threshold voltage (Vth) of K2013-VB is 3V, ensuring fast turn-on at a lower gate voltage. At the same time, its on-resistance (RDS(ON)) is only 58mΩ at VGS=10V, showing excellent conductivity and low power consumption. Manufactured using Trench technology, K2013-VB has high switching speeds and low switching losses, making it suitable for a variety of high-frequency and high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 200V 3V 20A 58mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
K2013-VB Detailed parameter description

- **Model**: K2013-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Switching power supply**: K2013-VB is widely used in switching power supply (SMPS), which can effectively control the on and off of the power supply, improve the conversion efficiency of the power supply, and is suitable for AC-DC and DC-DC converters to help reduce system energy consumption.

2. **Motor control**: In motor drive applications, this MOSFET can provide current stably and is suitable for various motor control modules, such as brushless DC motor (BLDC) controllers, to improve the response speed and efficiency of the motor.

3. **Power management module**: K2013-VB is suitable for power management and distribution modules, which can effectively control voltage and current, ensure the stability and safety of the system, and is widely used in computers, servers and network equipment.

4. **Inverter**: In photovoltaic and wind power inverters, this device can effectively convert high-voltage DC to AC, support the efficient use of renewable energy, and is suitable for solar power generation systems and wind power generation equipment.

5. **Consumer Electronics**: K2013-VB is also suitable for various consumer electronics products, such as power tools and household appliances. With its high performance and stability, it provides reliable power management solutions for electronic devices.

In summary, K2013-VB is a high-efficiency, high-voltage single N-channel MOSFET suitable for multiple fields such as switching power supplies, motor control, power management, inverters and consumer electronics, and can perform well in high-load and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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