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K2007-VB Product details
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K2007-VB Product Introduction
K2007-VB is a high-efficiency single N-channel MOSFET in TO3P package, designed for high power and high voltage applications. Its maximum drain-source voltage (VDS) is 250V, suitable for a variety of power conversion and control applications. The gate-source voltage (VGS) of the device is ±20V, ensuring its stability and reliability under different operating conditions. The threshold voltage (Vth) of K2007-VB is 3.5V, ensuring fast switching response. Its on-resistance (RDS(ON)) is only 40mΩ @ VGS=10V, which greatly reduces power consumption and improves overall efficiency. The maximum drain current (ID) is 60A, enabling stable operation under various load conditions. This MOSFET adopts trench technology (Trench), with excellent thermal management and electrical performance, ensuring efficient and reliable performance.
K2007-VB is a high-efficiency single N-channel MOSFET in TO3P package, designed for high power and high voltage applications. Its maximum drain-source voltage (VDS) is 250V, suitable for a variety of power conversion and control applications. The gate-source voltage (VGS) of the device is ±20V, ensuring its stability and reliability under different operating conditions. The threshold voltage (Vth) of K2007-VB is 3.5V, ensuring fast switching response. Its on-resistance (RDS(ON)) is only 40mΩ @ VGS=10V, which greatly reduces power consumption and improves overall efficiency. The maximum drain current (ID) is 60A, enabling stable operation under various load conditions. This MOSFET adopts trench technology (Trench), with excellent thermal management and electrical performance, ensuring efficient and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K2007-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
- **Model**: K2007-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applications and modules
K2007-VB is widely used in the following fields and modules due to its high voltage and high current capabilities:
1. **Power Electronics Devices**: K2007-VB is suitable for various power electronic devices, including inverters and rectifiers, and can work stably under high voltage conditions to improve conversion efficiency.
2. **Switching Power Supply**: In switching power supply applications, this MOSFET can be used as the main switching element to provide low on-resistance, thereby reducing energy loss and improving overall system performance.
3. **Motor Drive**: K2007-VB performs well in motor control modules and can efficiently control high-power motors. It is suitable for industrial automation, robotics and other fields.
4. **High-frequency Switching Applications**: The device can be used in high-frequency switching circuits and has good switching performance to ensure high efficiency during fast switching.
5. **LED Driver**: In LED lighting applications, K2007-VB can effectively control high current and is suitable for various LED driver modules to ensure stable brightness and color.
In summary, K2007-VB has a wide range of application prospects in the field of high-power and high-voltage power management and control with its high voltage withstand of 250V and current capacity of 60A, and can meet various industrial and commercial needs.
K2007-VB is widely used in the following fields and modules due to its high voltage and high current capabilities:
1. **Power Electronics Devices**: K2007-VB is suitable for various power electronic devices, including inverters and rectifiers, and can work stably under high voltage conditions to improve conversion efficiency.
2. **Switching Power Supply**: In switching power supply applications, this MOSFET can be used as the main switching element to provide low on-resistance, thereby reducing energy loss and improving overall system performance.
3. **Motor Drive**: K2007-VB performs well in motor control modules and can efficiently control high-power motors. It is suitable for industrial automation, robotics and other fields.
4. **High-frequency Switching Applications**: The device can be used in high-frequency switching circuits and has good switching performance to ensure high efficiency during fast switching.
5. **LED Driver**: In LED lighting applications, K2007-VB can effectively control high current and is suitable for various LED driver modules to ensure stable brightness and color.
In summary, K2007-VB has a wide range of application prospects in the field of high-power and high-voltage power management and control with its high voltage withstand of 250V and current capacity of 60A, and can meet various industrial and commercial needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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