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K1985-01MR-VB Product details
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K1985-01MR-VB Product Introduction
K1985-01MR-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. The device has a maximum drain-source voltage (VDS) of 950V and a gate voltage (VGS) of ±30V, making it suitable for high voltage power supply and power conversion applications. Its on-resistance (RDS(ON)) is 2400mΩ @ VGS=10V and its maximum drain current is 6A. K1985-01MR-VB uses planar technology to ensure high stability and reliability, and can work efficiently in various harsh environments.
K1985-01MR-VB is a high voltage N-channel MOSFET in TO220F package, designed for applications requiring high voltage and medium current. The device has a maximum drain-source voltage (VDS) of 950V and a gate voltage (VGS) of ±30V, making it suitable for high voltage power supply and power conversion applications. Its on-resistance (RDS(ON)) is 2400mΩ @ VGS=10V and its maximum drain current is 6A. K1985-01MR-VB uses planar technology to ensure high stability and reliability, and can work efficiently in various harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K1985-01MR-VB
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
- **Model**: K1985-01MR-VB
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High-voltage power supply system**:
- K1985-01MR-VB has excellent application potential in high-voltage power supply design, capable of supporting voltages up to 950V, suitable for various power supply and voltage regulation applications, ensuring the safety and reliability of the system under high-voltage conditions.
2. **Inverter**:
- This MOSFET is an ideal switching element in inverter circuits, suitable for photovoltaic inverters and wind inverters. Its high drain-source voltage and current capabilities enable it to efficiently convert and manage power in solar and wind energy systems.
3. **Power tools and equipment**:
- K1985-01MR-VB is suitable for the drive circuits of power tools and high-power equipment, can work under high load conditions, provide stable current output, and ensure the efficient operation of the equipment.
4. **Industrial Power**:
- In industrial power management and control modules, the K1985-01MR-VB is capable of handling high voltage and high current, suitable for large-scale power distribution and equipment power supply, improving the performance and efficiency of the overall system.
5. **Communication Equipment**:
- The device can be used in communication base stations and other high-voltage circuits to support signal amplification and processing, ensuring the stability and reliability of communication systems in high-voltage environments.
In summary, the high voltage performance and stable current characteristics of the K1985-01MR-VB make it an ideal choice for a variety of high-voltage applications, providing reliable solutions in a variety of harsh environments.
1. **High-voltage power supply system**:
- K1985-01MR-VB has excellent application potential in high-voltage power supply design, capable of supporting voltages up to 950V, suitable for various power supply and voltage regulation applications, ensuring the safety and reliability of the system under high-voltage conditions.
2. **Inverter**:
- This MOSFET is an ideal switching element in inverter circuits, suitable for photovoltaic inverters and wind inverters. Its high drain-source voltage and current capabilities enable it to efficiently convert and manage power in solar and wind energy systems.
3. **Power tools and equipment**:
- K1985-01MR-VB is suitable for the drive circuits of power tools and high-power equipment, can work under high load conditions, provide stable current output, and ensure the efficient operation of the equipment.
4. **Industrial Power**:
- In industrial power management and control modules, the K1985-01MR-VB is capable of handling high voltage and high current, suitable for large-scale power distribution and equipment power supply, improving the performance and efficiency of the overall system.
5. **Communication Equipment**:
- The device can be used in communication base stations and other high-voltage circuits to support signal amplification and processing, ensuring the stability and reliability of communication systems in high-voltage environments.
In summary, the high voltage performance and stable current characteristics of the K1985-01MR-VB make it an ideal choice for a variety of high-voltage applications, providing reliable solutions in a variety of harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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