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K1984-01-VB Product details
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Product Introduction
K1984-01-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for power electronics applications. The device has a drain-source voltage (VDS) of 950V, enabling it to operate reliably in high-voltage environments and is suitable for applications requiring higher insulation levels. The threshold voltage (Vth) of K1984-01-VB is 3.5V, the on-resistance (RDS(ON)) is 2400mΩ@VGS=10V, and it supports a leakage current (ID) of up to 6A. Its planar technology (Plannar) ensures good switching characteristics and stability, giving it broad application prospects in the fields of power management and industrial control.
K1984-01-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for power electronics applications. The device has a drain-source voltage (VDS) of 950V, enabling it to operate reliably in high-voltage environments and is suitable for applications requiring higher insulation levels. The threshold voltage (Vth) of K1984-01-VB is 3.5V, the on-resistance (RDS(ON)) is 2400mΩ@VGS=10V, and it supports a leakage current (ID) of up to 6A. Its planar technology (Plannar) ensures good switching characteristics and stability, giving it broad application prospects in the fields of power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
K1984-01-VB is particularly suitable for **high-voltage switching power supplies** (SMPS) and **inverters**. Due to its 950V high voltage characteristics, the device is able to handle high voltages in multiple power applications, making it an important power switching component in systems such as solar inverters and UPS. These applications require equipment with high reliability and low energy loss, and the design characteristics of K1984-01-VB enable it to meet these requirements.
In **motor drive** and **industrial control** systems, K1984-01-VB can be used for motor starting and speed control. The high voltage and medium current capabilities of this MOSFET make it excellent in efficiently controlling and managing power, while its high on-resistance characteristics can reduce heat generation and enhance system stability.
In addition, the device is also widely used in **lighting and LED driver** modules, especially in lighting solutions that require dimming and high efficiency. The good switching performance of K1984-01-VB enables it to respond quickly to control signals, optimize lighting effects and energy efficiency, and is an ideal choice for intelligent lighting systems.
In short, K1984-01-VB can provide excellent performance and reliability in various high-voltage applications, ensuring the normal operation of the equipment under extreme conditions.
K1984-01-VB is particularly suitable for **high-voltage switching power supplies** (SMPS) and **inverters**. Due to its 950V high voltage characteristics, the device is able to handle high voltages in multiple power applications, making it an important power switching component in systems such as solar inverters and UPS. These applications require equipment with high reliability and low energy loss, and the design characteristics of K1984-01-VB enable it to meet these requirements.
In **motor drive** and **industrial control** systems, K1984-01-VB can be used for motor starting and speed control. The high voltage and medium current capabilities of this MOSFET make it excellent in efficiently controlling and managing power, while its high on-resistance characteristics can reduce heat generation and enhance system stability.
In addition, the device is also widely used in **lighting and LED driver** modules, especially in lighting solutions that require dimming and high efficiency. The good switching performance of K1984-01-VB enables it to respond quickly to control signals, optimize lighting effects and energy efficiency, and is an ideal choice for intelligent lighting systems.
In short, K1984-01-VB can provide excellent performance and reliability in various high-voltage applications, ensuring the normal operation of the equipment under extreme conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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