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K1984-01MR-VB Product details
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Product Introduction
K1984-01MR-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage applications, with a drain-source voltage (VDS) up to 950V and a maximum drain current (ID) of 6A. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 2400mΩ at VGS=10V. This design using planar technology gives K1984-01MR-VB good thermal performance and stability, suitable for circuits requiring high voltage and low leakage current.
K1984-01MR-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage applications, with a drain-source voltage (VDS) up to 950V and a maximum drain current (ID) of 6A. The threshold voltage (Vth) of this MOSFET is 3.5V, and the on-resistance (RDS(ON)) is 2400mΩ at VGS=10V. This design using planar technology gives K1984-01MR-VB good thermal performance and stability, suitable for circuits requiring high voltage and low leakage current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Drain current (ID)**: 6A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Drain current (ID)**: 6A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
The K1984-01MR-VB MOSFET shows wide applicability in multiple high-voltage applications. First, it can be used in power supply equipment, especially in high-voltage DC-DC converters, to effectively convert high voltage to the required lower voltage, supporting applications such as industrial and medical equipment. In addition, in motor drive and control systems, this MOSFET can effectively handle high-voltage currents to ensure efficient operation of the equipment.
In electrical and electronic equipment, the K1984-01MR-VB is also widely used in high-voltage switching power supplies, inverters, and power factor correction (PFC) circuits to help improve energy efficiency and reduce the overall energy consumption of the system. Due to its excellent voltage resistance characteristics and stable conduction performance, this MOSFET is also very suitable for power tools and other portable devices that require high voltage resistance. In general, the K1984-01MR-VB is an ideal choice for high-voltage applications due to its high-voltage capability and reliability.
The K1984-01MR-VB MOSFET shows wide applicability in multiple high-voltage applications. First, it can be used in power supply equipment, especially in high-voltage DC-DC converters, to effectively convert high voltage to the required lower voltage, supporting applications such as industrial and medical equipment. In addition, in motor drive and control systems, this MOSFET can effectively handle high-voltage currents to ensure efficient operation of the equipment.
In electrical and electronic equipment, the K1984-01MR-VB is also widely used in high-voltage switching power supplies, inverters, and power factor correction (PFC) circuits to help improve energy efficiency and reduce the overall energy consumption of the system. Due to its excellent voltage resistance characteristics and stable conduction performance, this MOSFET is also very suitable for power tools and other portable devices that require high voltage resistance. In general, the K1984-01MR-VB is an ideal choice for high-voltage applications due to its high-voltage capability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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