K1968-VB Product details
Product introduction:
K1968-VB is a high-performance single N-channel MOSFET in a TO3P package designed for high voltage applications. Its maximum drain-source voltage (VDS) is 600V, which can withstand higher voltages and is suitable for a variety of power management and control applications. The gate-source voltage (VGS) is rated at ±30V, making it stable in various electrical environments. The threshold voltage (Vth) is 3.5V, ensuring fast turn-on at the appropriate gate voltage. The device has an on-resistance (RDS(ON)) of 380mΩ (@VGS=10V) and supports a drain current (ID) of up to 11A. K1968-VB uses SJ_Multi-EPI technology to optimize switching performance and conduction characteristics, making it very suitable for high-efficiency and high-reliability applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ (@VGS=10V)
- **Maximum leakage current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
K1968-VB MOSFET performs well in multiple high-voltage power conversion and management applications. The following are typical application fields and module examples:
1. **High-voltage DC-DC converter**: K1968-VB is an ideal choice for high-voltage DC-DC converters. Its VDS up to 600V and low RDS(ON) characteristics ensure efficient power conversion and are widely used in power supply and industrial control systems.
2. **Motor driver**: This MOSFET can act as a switching element in motor drive applications, providing efficient current control, especially suitable for driving AC and DC motors, improving the efficiency and stability of motor operation.
3. **Switching power supply**: In switching power supply modules, the superior performance of K1968-VB can significantly improve energy efficiency. It is suitable for power management of various consumer electronics and industrial equipment to ensure efficient operation of the power system.
4. **Inverters**: In applications such as solar inverters and battery inverters, the device can efficiently convert and manage electrical energy, providing reliable solutions for renewable energy systems.
5. **Welding equipment**: K1968-VB can also be used in high-frequency welding and other high-energy consumption applications. With its high withstand voltage characteristics, it can maintain stable performance under harsh operating conditions.
In summary, K1968-VB provides high-quality solutions in many fields with its excellent electrical performance and wide application adaptability, meeting the requirements of modern electronic equipment for high efficiency and high reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image