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K1960-VB Product details
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K1960-VB Product Introduction
K1960-VB is a high-performance single N-channel MOSFET in a SOT89 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is 30V, making it suitable for a variety of consumer electronics and industrial applications. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ at VGS=2.5V, and drops to 22mΩ at VGS=4.5V, showing excellent conductivity. This makes the K1960-VB excel in high-efficiency switching power supplies, drive circuits, and other applications that require high current handling. Its maximum drain current (ID) is 6.8A, providing designers with more flexibility.
K1960-VB is a high-performance single N-channel MOSFET in a SOT89 package, designed for low voltage and high efficiency applications. Its maximum drain-source voltage (VDS) is 30V, making it suitable for a variety of consumer electronics and industrial applications. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ at VGS=2.5V, and drops to 22mΩ at VGS=4.5V, showing excellent conductivity. This makes the K1960-VB excel in high-efficiency switching power supplies, drive circuits, and other applications that require high current handling. Its maximum drain current (ID) is 6.8A, providing designers with more flexibility.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
K1960-VB Detailed parameter description
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ (at VGS=2.5V)
- 22mΩ (at VGS=4.5V)
- **Maximum drain current (ID)**: 6.8A
- **Technology type**: Trench
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ (at VGS=2.5V)
- 22mΩ (at VGS=4.5V)
- **Maximum drain current (ID)**: 6.8A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Portable Electronic Devices**:
The K1960-VB is ideal for portable devices such as smartphones, tablets, and portable chargers. Its low on-resistance and high current handling capability can improve battery efficiency and extend the operating time of the device while reducing heat and improving the user experience.
2. **LED Driver Circuit**:
In LED driver applications, the K1960-VB can provide stable current support to drive high-brightness LED lamps. Its excellent switching performance and low conduction loss can ensure that the LED maintains high brightness during long-term operation and reduces energy waste.
3. **DC-DC Converter**:
The K1960-VB also performs well in DC-DC converters, especially for buck and boost converters. Its high efficiency and low RDS(ON) characteristics can reduce power loss during the conversion process, improve overall conversion efficiency, and meet various power management needs.
4. **Power tools**:
This MOSFET is also suitable for the power management system of power tools. Its high current carrying capacity and fast switching characteristics enable the power tools to maintain good performance during startup and load changes, extending the service life of the tools.
In summary, K1960-VB provides strong support for modern electronic design with its high efficiency and diverse application scenarios. It is suitable for use in multiple fields such as portable devices, LED drivers, DC-DC converters and power tools.
1. **Portable Electronic Devices**:
The K1960-VB is ideal for portable devices such as smartphones, tablets, and portable chargers. Its low on-resistance and high current handling capability can improve battery efficiency and extend the operating time of the device while reducing heat and improving the user experience.
2. **LED Driver Circuit**:
In LED driver applications, the K1960-VB can provide stable current support to drive high-brightness LED lamps. Its excellent switching performance and low conduction loss can ensure that the LED maintains high brightness during long-term operation and reduces energy waste.
3. **DC-DC Converter**:
The K1960-VB also performs well in DC-DC converters, especially for buck and boost converters. Its high efficiency and low RDS(ON) characteristics can reduce power loss during the conversion process, improve overall conversion efficiency, and meet various power management needs.
4. **Power tools**:
This MOSFET is also suitable for the power management system of power tools. Its high current carrying capacity and fast switching characteristics enable the power tools to maintain good performance during startup and load changes, extending the service life of the tools.
In summary, K1960-VB provides strong support for modern electronic design with its high efficiency and diverse application scenarios. It is suitable for use in multiple fields such as portable devices, LED drivers, DC-DC converters and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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