K1959-VB Product details
Product introduction:
K1959-VB is a high-efficiency single N-channel MOSFET in SOT89 package, specially designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for use in electronic devices that require miniaturization and high power density. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V, showing excellent switching characteristics. At VGS=2.5V, the on-resistance (RDS(ON)) is 30mΩ, and it drops to 22mΩ at VGS=4.5V, showing its good performance at low voltage. The maximum drain current (ID) of K1959-VB reaches 6.8A, which is suitable for application in various modern electronic devices, providing high-efficiency and low-power solutions. Using Trench technology, K1959-VB ensures high efficiency and thermal management capabilities, and operates stably in a variety of working environments.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Model**: K1959-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications:
K1959-VB is widely used in many fields, mainly including:
1. **Power management**: K1959-VB is very suitable for DC-DC converters, which can provide stable power output while reducing power consumption, and meet the needs of modern electronic devices for high-efficiency power supply.
2. **Consumer electronics**: In smartphones, tablets and other portable electronic products, K1959-VB's high current capability and miniaturized design make it an ideal choice, helping to achieve efficient power management and charging circuits.
3. **LED driver**: K1959-VB can be used in LED driver circuits to provide stable current output to ensure efficient lighting effects of LEDs, while reducing energy consumption and improving the overall performance of lighting equipment.
4. **Switching applications**: In switching power supplies, relay drivers and other circuits, K1959-VB can be used as a switching element to ensure high-efficiency signal transmission and low heat generation, adapting to various electrical environments.
5. **Motor Control**: This MOSFET can be used in small motor control systems to support high-efficiency motor drives and provide precise speed and torque control.
Through these applications, the K1959-VB demonstrates its versatility and reliability in modern electronic devices, especially in situations where low voltage and high current are required, providing superior performance and energy efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image