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K1959-VB Product details

Product introduction:

K1959-VB Product Introduction

K1959-VB is a high-efficiency single N-channel MOSFET in SOT89 package, specially designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for use in electronic devices that require miniaturization and high power density. The device has a maximum gate-source voltage (VGS) of ±20V and a threshold voltage (Vth) of 1.7V, showing excellent switching characteristics. At VGS=2.5V, the on-resistance (RDS(ON)) is 30mΩ, and it drops to 22mΩ at VGS=4.5V, showing its good performance at low voltage. The maximum drain current (ID) of K1959-VB reaches 6.8A, which is suitable for application in various modern electronic devices, providing high-efficiency and low-power solutions. Using Trench technology, K1959-VB ensures high efficiency and thermal management capabilities, and operates stably in a variety of working environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 30V 1.7V 6.8A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
Detailed parameter description

- **Model**: K1959-VB
- **Package**: SOT89
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 6.8A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

K1959-VB is widely used in many fields, mainly including:

1. **Power management**: K1959-VB is very suitable for DC-DC converters, which can provide stable power output while reducing power consumption, and meet the needs of modern electronic devices for high-efficiency power supply.

2. **Consumer electronics**: In smartphones, tablets and other portable electronic products, K1959-VB's high current capability and miniaturized design make it an ideal choice, helping to achieve efficient power management and charging circuits.

3. **LED driver**: K1959-VB can be used in LED driver circuits to provide stable current output to ensure efficient lighting effects of LEDs, while reducing energy consumption and improving the overall performance of lighting equipment.

4. **Switching applications**: In switching power supplies, relay drivers and other circuits, K1959-VB can be used as a switching element to ensure high-efficiency signal transmission and low heat generation, adapting to various electrical environments.

5. **Motor Control**: This MOSFET can be used in small motor control systems to support high-efficiency motor drives and provide precise speed and torque control.

Through these applications, the K1959-VB demonstrates its versatility and reliability in modern electronic devices, especially in situations where low voltage and high current are required, providing superior performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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