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K1946-01MR-VB Product details
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K1946-01MR-VB Product Introduction
K1946-01MR-VB is a high-performance single N-channel MOSFET with excellent conductive and thermal properties. It uses a TO220F package and can withstand a drain-source voltage (VDS) of up to 60V. The maximum drain current (ID) reaches 70A, making it suitable for high-power applications. Its gate-source voltage (VGS) is ±20V and the threshold voltage (Vth) is 2.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of the device is 10mΩ at VGS=10V and 12mΩ at VGS=4.5V, indicating that its energy loss in the switching state is very low. The K1946-01MR-VB uses Trench technology and has excellent electrical performance. It is widely used in various high-efficiency power supplies and switching control fields.
K1946-01MR-VB is a high-performance single N-channel MOSFET with excellent conductive and thermal properties. It uses a TO220F package and can withstand a drain-source voltage (VDS) of up to 60V. The maximum drain current (ID) reaches 70A, making it suitable for high-power applications. Its gate-source voltage (VGS) is ±20V and the threshold voltage (Vth) is 2.5V, ensuring that it can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of the device is 10mΩ at VGS=10V and 12mΩ at VGS=4.5V, indicating that its energy loss in the switching state is very low. The K1946-01MR-VB uses Trench technology and has excellent electrical performance. It is widely used in various high-efficiency power supplies and switching control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
K1946-01MR-VB Detailed parameter description
- **Model**: K1946-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: K1946-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Switching power supply (SMPS)**: K1946-01MR-VB is widely used in switching power supplies. With its low RDS(ON) characteristics, it effectively reduces energy loss in the power conversion process and improves system efficiency. Suitable for high-power AC-DC and DC-DC converters.
2. **Power tools**: In power tools, this MOSFET can provide stable current control and support fast switching of high-power loads, thereby improving the performance and response speed of the tools.
3. **Electric vehicle drive control**: In the drive control system of electric vehicles, K1946-01MR-VB can be used as a switching device for motor control to handle high-current motor drive to ensure high efficiency and safety.
4. **Battery management system**: This MOSFET is also used in battery management systems, especially during battery charging and discharging, it can achieve fast switching and efficient current control, improving battery charging efficiency and safety.
5. **Inverter**: In solar and wind inverters, K1946-01MR-VB can effectively control the conversion from DC to AC, support high-frequency switching operations, and ensure high efficiency and stability of the system.
In summary, K1946-01MR-VB is a high-efficiency MOSFET that is widely used in switching power supplies, power tools, electric vehicle drive control, battery management systems, inverters and other fields. It can achieve efficient power conversion and control under high voltage and high current environments.
1. **Switching power supply (SMPS)**: K1946-01MR-VB is widely used in switching power supplies. With its low RDS(ON) characteristics, it effectively reduces energy loss in the power conversion process and improves system efficiency. Suitable for high-power AC-DC and DC-DC converters.
2. **Power tools**: In power tools, this MOSFET can provide stable current control and support fast switching of high-power loads, thereby improving the performance and response speed of the tools.
3. **Electric vehicle drive control**: In the drive control system of electric vehicles, K1946-01MR-VB can be used as a switching device for motor control to handle high-current motor drive to ensure high efficiency and safety.
4. **Battery management system**: This MOSFET is also used in battery management systems, especially during battery charging and discharging, it can achieve fast switching and efficient current control, improving battery charging efficiency and safety.
5. **Inverter**: In solar and wind inverters, K1946-01MR-VB can effectively control the conversion from DC to AC, support high-frequency switching operations, and ensure high efficiency and stability of the system.
In summary, K1946-01MR-VB is a high-efficiency MOSFET that is widely used in switching power supplies, power tools, electric vehicle drive control, battery management systems, inverters and other fields. It can achieve efficient power conversion and control under high voltage and high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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