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K1933-VB Product details
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K1933-VB Product Introduction
K1933-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) reaches 900V, making it suitable for circuits requiring high voltage resistance. The gate-source voltage (VGS) of the device is ±30V, which enables stable operation under a variety of operating conditions. The threshold voltage (Vth) of K1933-VB is 3.5V, providing good switching characteristics. Its on-resistance (RDS(ON)) is 750mΩ @ VGS=10V, ensuring low power consumption and high efficiency in the on state. The maximum drain current (ID) is 9A, suitable for handling various load applications. The use of SJ_Multi-EPI (super junction multilayer epitaxy) technology gives it excellent thermal management performance and electrical characteristics, ensuring high performance and reliability.
K1933-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) reaches 900V, making it suitable for circuits requiring high voltage resistance. The gate-source voltage (VGS) of the device is ±30V, which enables stable operation under a variety of operating conditions. The threshold voltage (Vth) of K1933-VB is 3.5V, providing good switching characteristics. Its on-resistance (RDS(ON)) is 750mΩ @ VGS=10V, ensuring low power consumption and high efficiency in the on state. The maximum drain current (ID) is 9A, suitable for handling various load applications. The use of SJ_Multi-EPI (super junction multilayer epitaxy) technology gives it excellent thermal management performance and electrical characteristics, ensuring high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: K1933-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Model**: K1933-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Modules
With its high voltage and high current capabilities, the K1933-VB is well suited for the following applications and modules:
1. **High Voltage Switching Power Supply (SMPS)**: This MOSFET is widely used in high voltage switching power supply systems as the main switching device, which can efficiently handle 900V input voltage, reduce switching losses and improve system energy efficiency.
2. **Motor Drive**: In high voltage motor control and drive modules, the K1933-VB can reliably control high power motors, ensuring efficient and stable operation, suitable for industrial and home appliances.
3. **Photovoltaic Inverter**: In solar photovoltaic inverters, this MOSFET acts as a core power switch, capable of handling high voltage and high current, ensuring efficient DC to AC conversion.
4. **Power Electronics**: The K1933-VB is used in various power electronic devices for high voltage switching and control circuits, which can meet the high requirements in power systems.
5. **Charger and Battery Management System**: This MOSFET is suitable for high-voltage chargers and battery management systems, and can provide stable current and effective voltage management to ensure safe and efficient charging of the battery.
In summary, K1933-VB is widely used in high-voltage power management and control fields that require high performance and high reliability due to its high withstand voltage, high current capability and SJ_Multi-EPI technology.
With its high voltage and high current capabilities, the K1933-VB is well suited for the following applications and modules:
1. **High Voltage Switching Power Supply (SMPS)**: This MOSFET is widely used in high voltage switching power supply systems as the main switching device, which can efficiently handle 900V input voltage, reduce switching losses and improve system energy efficiency.
2. **Motor Drive**: In high voltage motor control and drive modules, the K1933-VB can reliably control high power motors, ensuring efficient and stable operation, suitable for industrial and home appliances.
3. **Photovoltaic Inverter**: In solar photovoltaic inverters, this MOSFET acts as a core power switch, capable of handling high voltage and high current, ensuring efficient DC to AC conversion.
4. **Power Electronics**: The K1933-VB is used in various power electronic devices for high voltage switching and control circuits, which can meet the high requirements in power systems.
5. **Charger and Battery Management System**: This MOSFET is suitable for high-voltage chargers and battery management systems, and can provide stable current and effective voltage management to ensure safe and efficient charging of the battery.
In summary, K1933-VB is widely used in high-voltage power management and control fields that require high performance and high reliability due to its high withstand voltage, high current capability and SJ_Multi-EPI technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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