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K1920-VB Product details
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K1920-VB Product Introduction
K1920-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 250V, suitable for applications requiring medium to high voltage and high current handling. The on-resistance (RDS(ON)) of this MOSFET is 176mΩ at VGS=10V, which can effectively reduce switching losses and thus improve the energy efficiency of the system. The maximum drain current (ID) is 17A, which enables it to exhibit good performance and stability in a variety of applications, and is particularly suitable for high-efficiency power management and motor drive systems.
K1920-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) is 250V, suitable for applications requiring medium to high voltage and high current handling. The on-resistance (RDS(ON)) of this MOSFET is 176mΩ at VGS=10V, which can effectively reduce switching losses and thus improve the energy efficiency of the system. The maximum drain current (ID) is 17A, which enables it to exhibit good performance and stability in a variety of applications, and is particularly suitable for high-efficiency power management and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K1920-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 17A
- **Technology type**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 176mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 17A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supply (SMPS)**:
The K1920-VB is ideal for use in switching power supply modules, especially for AC-DC converters and DC-DC converters. Its low on-resistance and high current handling capability can effectively improve power efficiency, reduce energy loss, and is suitable for high-power power solutions.
2. **Motor Control**:
This MOSFET performs well in motor drive applications and can be used in industrial motor control systems. Its current and voltage characteristics allow it to maintain high efficiency when controlling motor starting and speed regulation, helping to improve the operating performance of the motor.
3. **LED Driver**:
The K1920-VB is also suitable for LED drive circuits, especially in high-power LED applications that require high current drive. Its good conduction performance ensures that the LED obtains stable current during operation, enhancing brightness and extending service life.
4. **High-frequency switching applications**:
Due to its excellent switching performance, K1920-VB can be used in high-frequency switching applications such as wireless chargers and various RF (radio frequency) devices. In these applications, the fast switching capability of MOSFET can reduce switching losses and improve overall energy efficiency.
In summary, K1920-VB is suitable for a variety of medium-voltage applications, including power management, motor control, and LED driving, with its high current and high voltage capabilities. Its excellent performance and high efficiency provide a reliable solution for modern electronic design.
1. **Switching Power Supply (SMPS)**:
The K1920-VB is ideal for use in switching power supply modules, especially for AC-DC converters and DC-DC converters. Its low on-resistance and high current handling capability can effectively improve power efficiency, reduce energy loss, and is suitable for high-power power solutions.
2. **Motor Control**:
This MOSFET performs well in motor drive applications and can be used in industrial motor control systems. Its current and voltage characteristics allow it to maintain high efficiency when controlling motor starting and speed regulation, helping to improve the operating performance of the motor.
3. **LED Driver**:
The K1920-VB is also suitable for LED drive circuits, especially in high-power LED applications that require high current drive. Its good conduction performance ensures that the LED obtains stable current during operation, enhancing brightness and extending service life.
4. **High-frequency switching applications**:
Due to its excellent switching performance, K1920-VB can be used in high-frequency switching applications such as wireless chargers and various RF (radio frequency) devices. In these applications, the fast switching capability of MOSFET can reduce switching losses and improve overall energy efficiency.
In summary, K1920-VB is suitable for a variety of medium-voltage applications, including power management, motor control, and LED driving, with its high current and high voltage capabilities. Its excellent performance and high efficiency provide a reliable solution for modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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