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K18A50D-VB Product details
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K18A50D-VB Product Introduction
K18A50D-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V, ensuring its suitability for a variety of circuits requiring high voltage resistance. The device has a gate-source voltage (VGS) of ±30V, can operate over a wide voltage range, and a threshold voltage (Vth) of 3.5V, with good conduction characteristics. The on-resistance (RDS(ON)) of K18A50D-VB is 160mΩ @ VGS=10V, ensuring its low power consumption and high efficiency. The maximum drain current (ID) is 20A, making it suitable for high current load applications. This product uses SJ_Multi-EPI (super junction multilayer epitaxy) technology, with excellent electrical performance and heat dissipation characteristics, suitable for high performance and reliability applications.
K18A50D-VB is a single N-channel MOSFET in TO220F package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V, ensuring its suitability for a variety of circuits requiring high voltage resistance. The device has a gate-source voltage (VGS) of ±30V, can operate over a wide voltage range, and a threshold voltage (Vth) of 3.5V, with good conduction characteristics. The on-resistance (RDS(ON)) of K18A50D-VB is 160mΩ @ VGS=10V, ensuring its low power consumption and high efficiency. The maximum drain current (ID) is 20A, making it suitable for high current load applications. This product uses SJ_Multi-EPI (super junction multilayer epitaxy) technology, with excellent electrical performance and heat dissipation characteristics, suitable for high performance and reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K18A50D-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: K18A50D-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
With its high voltage and high current capabilities, the K18A50D-VB is ideal for the following applications and modules:
1. **Switching Power Supply (SMPS)**: This MOSFET is widely used in high voltage switching power supply systems. As the main switching device, it can efficiently handle high voltage input, reduce switching losses, and improve system energy efficiency.
2. **Lighting System**: In high voltage LED drive circuits, the high withstand voltage characteristics of the K18A50D-VB make it suitable for use in high power LED drive modules to ensure stable current output and efficient energy conversion.
3. **Industrial Control**: In industrial automation equipment and control systems, this MOSFET is used in motor control and drive modules of high voltage equipment to provide reliable switching and protection functions.
4. **Inverter**: In high voltage inverters, especially solar inverters and battery management systems, the K18A50D-VB is used as a core power conversion device to ensure efficient DC to AC conversion.
5. **Household appliances**: This MOSFET is suitable for high-voltage control modules of various household appliances, such as air conditioners and refrigerators, which helps to improve energy efficiency and extend the life of equipment.
In summary, K18A50D-VB is widely used in multiple high-voltage power management and control fields that require stability, efficiency and high reliability, thanks to its high voltage and high current capabilities, as well as the high performance and low power consumption brought by SJ_Multi-EPI technology.
With its high voltage and high current capabilities, the K18A50D-VB is ideal for the following applications and modules:
1. **Switching Power Supply (SMPS)**: This MOSFET is widely used in high voltage switching power supply systems. As the main switching device, it can efficiently handle high voltage input, reduce switching losses, and improve system energy efficiency.
2. **Lighting System**: In high voltage LED drive circuits, the high withstand voltage characteristics of the K18A50D-VB make it suitable for use in high power LED drive modules to ensure stable current output and efficient energy conversion.
3. **Industrial Control**: In industrial automation equipment and control systems, this MOSFET is used in motor control and drive modules of high voltage equipment to provide reliable switching and protection functions.
4. **Inverter**: In high voltage inverters, especially solar inverters and battery management systems, the K18A50D-VB is used as a core power conversion device to ensure efficient DC to AC conversion.
5. **Household appliances**: This MOSFET is suitable for high-voltage control modules of various household appliances, such as air conditioners and refrigerators, which helps to improve energy efficiency and extend the life of equipment.
In summary, K18A50D-VB is widely used in multiple high-voltage power management and control fields that require stability, efficiency and high reliability, thanks to its high voltage and high current capabilities, as well as the high performance and low power consumption brought by SJ_Multi-EPI technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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