K18A50DA4-VB Product details
Product introduction:
K18A50DA4-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for high-efficiency and high-power applications. Its maximum drain-source voltage (VDS) is 650V and its gate-source voltage (VGS) is rated at ±30V, enabling reliable performance in high-voltage environments. Its threshold voltage (Vth) is 3.5V, ensuring fast response at appropriate gate voltages. The device's on-resistance (RDS(ON)) is 160mΩ at a gate voltage of 10V, providing good conduction efficiency and supporting drain currents (ID) up to 20A. The K18A50DA4-VB uses super junction multi-epitaxial (SJ_Multi-EPI) technology to optimize the device's performance and energy efficiency, making it suitable for demanding power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications:
The K18A50DA4-VB MOSFET is suitable for multiple high-voltage power conversion and power management applications, especially in systems that require high efficiency and high reliability. The following are examples of its application areas and modules:
1. **Switching Power Supply (SMPS)**: Due to its high voltage and high current handling capabilities, the K18A50DA4-VB is particularly suitable for high-power switching power supply applications, helping to improve energy efficiency and reduce power consumption. Its robustness in high-voltage environments makes it very suitable for industrial power modules.
2. **Motor Driver**: The device can provide efficient power conversion in motor drive applications, especially for the control of high-power brushless DC motors (BLDC) and AC motors (AC). Its high voltage characteristics allow operation at higher power levels, while its low on-resistance reduces losses.
3. **Photovoltaic inverter**: In solar photovoltaic systems, the K18A50DA4-VB can be used as the core switching device of the inverter module to help efficiently convert DC power to AC power. Its high-voltage capability makes it suitable for the high-voltage boost conversion level in photovoltaic inverters.
4. **Home appliances and consumer electronics**: This MOSFET is also widely used in power management of consumer electronic devices and smart home appliances, such as air conditioners, refrigerators and other high-power appliances. High-voltage circuits provide stable power conversion and control.
In general, the K18A50DA4-VB provides a reliable solution in multiple power-intensive applications with its high-voltage handling capabilities and high-efficiency characteristics.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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