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K18A30D-VB Product details

Product introduction:

K18A30D-VB Product Introduction

K18A30D-VB is a high-performance single N-channel MOSFET in a TO220F package suitable for medium and high voltage applications. The device has a maximum drain-source voltage (VDS) of 500V, combined with its advanced SJ (super junction) multi-epitaxial technology, it has excellent conduction efficiency and voltage resistance. The on-resistance (RDS(ON)) of this MOSFET is 140mΩ (at VGS=10V), and the maximum drain current (ID) can reach 30A, ensuring good current handling capability under high load conditions. The K18A30D-VB is particularly suitable for applications requiring high voltage conversion, power density and efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 500V 3.5V 30A 140mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
K18A30D-VB Detailed parameter description

- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI (super junction multi-epitaxial technology)

Domain and module applications:

Applications and module examples

1. **Photovoltaic inverter**:
K18A30D-VB is very suitable for photovoltaic inverters as a power switching device. Its high withstand voltage (500V) and low on-resistance enable efficient energy conversion under high voltage conditions, helping to improve the overall efficiency of solar energy systems.

2. **Switching power supply (SMPS)**:
In switching power supplies, K18A30D-VB's super junction multi-epitaxial technology (SJ_Multi-EPI) can provide excellent conduction efficiency and reduce power losses, making it particularly suitable for high-power AC-DC converters and isolated DC-DC power modules. This helps improve the energy efficiency of the power system and reduce heat generation.

3. **Motor control system**:
This MOSFET is suitable for use in motor drive control systems, especially in the field of industrial automation. Its high current handling capability and high voltage tolerance enable it to work stably in harsh environments, making it suitable for high-power motor drive applications.

4. **Home appliances and industrial equipment**:
K18A30D-VB is also widely used in home appliances and industrial equipment, especially in high voltage and high power applications, such as air conditioners, washing machines, and power tools. Its low on-resistance and good thermal performance enable it to provide stable power control and management in these areas.

K18A30D-VB, with its high voltage and high current characteristics, is suitable for a variety of application scenarios that require high power handling and conversion efficiency, and has important application value in industrial control, power management and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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